STMicroelectronics

STF18NM60N  

Single FETs, MOSFETs

STF18NM60N is a high voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in high voltage applications, such as power electronics, motor control, and power supplies.

Description:

The STF18NM60N is a N-channel enhancement mode MOSFET with a voltage rating of 600V and a continuous drain current (Id) of 18A. It features a low on-state resistance (RDS(on)) of 0.65mΩ, which helps to minimize power dissipation and improve efficiency in high current applications.

Features:

1. High voltage rating of 600V
2. Continuous drain current of 18A
3. Low on-state resistance (RDS(on)) of 0.65mΩ
4. Enhancement mode operation
5. Suitable for use in high voltage applications
6. Available in a TO-220 package

Applications:

1. Power electronics
2. Motor control
3. Power supplies
4. Inverters
5. DC-DC converters
6. Battery management systems
7. Industrial control systems
8. Renewable energy systems

The STF18NM60N is a reliable and efficient MOSFET that can be used in a wide range of high voltage applications. Its low on-state resistance and high voltage rating make it an ideal choice for applications that require efficient power switching and high current handling capabilities.

STF18NM60N Documents

Download datasheets and manufacturer documentation for STF18NM60N

PCN Assembly/Origin :

IPG-PWR/14/8603 21/Jul/2014      

Datasheets :

STx18NM60N      

Other Related Documents :

STF18NM60N View All Specifications      

HTML Datasheet :

STx18NM60N