STMicroelectronics_STF18NM60N
original

STMicroelectronics
STF18NM60N

278-STF18NM60N
PDF Datasheet
600V N-CH MOSFET, 13A, 260mR, TO-220FP
16 Weeks

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Tech Specifications

Package/Case
TO-220-3
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
260mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
285MR
Fall Time
40ns
Gate to Source Voltage (Vgs)
25V
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STF18NM60N Description

STF18NM60N is a high voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in high voltage applications, such as power electronics, motor control, and power supplies.

Description:

The STF18NM60N is a N-channel enhancement mode MOSFET with a voltage rating of 600V and a continuous drain current (Id) of 18A. It features a low on-state resistance (RDS(on)) of 0.65mΩ, which helps to minimize power dissipation and improve efficiency in high current applications.

Features:

  1. High voltage rating of 600V
  2. Continuous drain current of 18A
  3. Low on-state resistance (RDS(on)) of 0.65mΩ
  4. Enhancement mode operation
  5. Suitable for use in high voltage applications
  6. Available in a TO-220 package

Applications:

  1. Power electronics
  2. Motor control
  3. Power supplies
  4. Inverters
  5. DC-DC converters
  6. Battery management systems
  7. Industrial control systems
  8. Renewable energy systems

The STF18NM60N is a reliable and efficient MOSFET that can be used in a wide range of high voltage applications. Its low on-state resistance and high voltage rating make it an ideal choice for applications that require efficient power switching and high current handling capabilities.

FAQ

What is STF18NM60N?
STF18NM60N is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
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