STMicroelectronics

SCT20N120  

Single FETs, MOSFETs

SCT20N120 Description

The SCT20N120 is a high-performance Silicon Carbide (SiC) Field-Effect Transistor (FET) from STMicroelectronics, designed for demanding power electronics applications. This N-channel MOSFET offers a unique combination of high voltage and low on-resistance, making it an ideal choice for applications requiring high efficiency and fast switching speeds. With a maximum drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 20A at 25°C, the SCT20N120 delivers outstanding performance in a wide range of power electronics applications.

SCT20N120 Features

• High Voltage and Low On-Resistance: The SCT20N120 boasts a maximum drain-to-source voltage (Vdss) of 1200V and a maximum on-resistance (Rds On) of 290mΩ at 10A and 20V, ensuring efficient power delivery and minimal power loss.
• Fast Switching Speeds: With a maximum gate threshold voltage (Vgs(th)) of 3.5V at 1mA, the SCT20N120 enables fast switching speeds, reducing switching losses and improving overall system efficiency.
• Low Gate Charge: The maximum gate charge (Qg) of 45nC at 20V minimizes switching losses and contributes to the device's high efficiency.
• High Power Dissipation: The SCT20N120 can dissipate up to 175W of power, making it suitable for high-power applications.
• Robust Package: The HiP247™ package provides excellent thermal performance and mechanical robustness, ensuring reliable operation in harsh environments.
• Environmental Compliance: The SCT20N120 is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.

SCT20N120 Applications

The SCT20N120 is ideal for a variety of high-power applications, including:

• Electric Vehicle (EV) Charging: The high voltage and low on-resistance of the SCT20N120 make it suitable for EV charging systems, where high efficiency and fast charging times are critical.
• Renewable Energy Systems: The SCT20N120's high voltage and low on-resistance are well-suited for power conversion in solar and wind energy systems, improving overall system efficiency.
• Industrial Power Supplies: The SCT20N120's high power dissipation and fast switching speeds make it an excellent choice for high-power industrial power supplies, where reliability and efficiency are paramount.
• Motor Drives: The SCT20N120's low on-resistance and fast switching speeds contribute to high efficiency and reduced power loss in motor drive applications.

Conclusion of SCT20N120

The SCT20N120 from STMicroelectronics is a high-performance SiC FET that delivers exceptional performance in high-power applications. Its combination of high voltage, low on-resistance, and fast switching speeds make it an ideal choice for EV charging, renewable energy systems, industrial power supplies, and motor drives. With its robust package, environmental compliance, and unique features, the SCT20N120 offers a compelling solution for demanding power electronics applications.

SCT20N120 Documents

Download datasheets and manufacturer documentation for SCT20N120

Datasheets :

Fine Tune SIC MOSFET Gate Driver       SCT20N120      

PCN Packaging :

Standard outer labelling 15/Nov/2023      

HTML Datasheet :

Fine Tune SIC MOSFET Gate Driver