STMicroelectronics_STP6NK90Z

STMicroelectronics
STP6NK90Z  
Single FETs, MOSFETs

STMicroelectronics
STP6NK90Z
278-STP6NK90Z
MOSFET N-CH 900V 5.8A TO220AB
In Stock : 618

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    STP6NK90Z Description

    STP6NK90Z is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for high voltage applications and offers excellent electrical characteristics and performance.

    Description:

    The STP6NK90Z is a high voltage N-channel MOSFET transistor with a drain-source voltage (Vds) of 900V and a continuous drain current (Id) of 4.2A. It features a low on-state resistance (Rds(on)) of 0.085 Ohms (maximum) and a fast switching speed with a gate charge (Qg) of 34nC (typical).

    Features:

    1. High voltage operation: The STP6NK90Z is designed to operate at high voltages, making it suitable for applications that require high voltage switches or high voltage power conversion.
    2. Low on-state resistance: The low Rds(on) of the STP6NK90Z ensures efficient power conversion and reduces power loss in the switching application.
    3. Fast switching speed: The fast switching speed and low gate charge of the STP6NK90Z make it suitable for high-frequency applications.
    4. High temperature operation: The STP6NK90Z can operate in a wide temperature range of -55°C to +175°C, making it suitable for use in harsh environments.

    Applications:

    The STP6NK90Z is suitable for a wide range of applications that require high voltage switches or high voltage power conversion. Some of the key applications include:

    1. Motor control: The STP6NK90Z can be used in motor control applications, such as in industrial automation and robotics, where high voltage switches are required to control the motor speed and direction.
    2. Power supplies: The STP6NK90Z can be used in power supply applications, such as in switching power supplies and battery chargers, where high voltage switches are required to control the power flow.
    3. Renewable energy: The STP6NK90Z can be used in renewable energy applications, such as in solar panel systems and wind turbines, where high voltage switches are required to control the power flow and convert the energy efficiently.
    4. Automotive: The STP6NK90Z can be used in automotive applications, such as in electric vehicles and hybrid vehicles, where high voltage switches are required to control the power flow in the powertrain system.

    In summary, the STP6NK90Z is a high voltage N-channel MOSFET transistor that offers excellent electrical characteristics and performance for high voltage applications. Its low on-state resistance, fast switching speed, and high temperature operation make it suitable for a wide range of applications, including motor control, power supplies, renewable energy, and automotive.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Typical Gate Plateau Voltage (V)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Series
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STP6NK90Z Documents

    Download datasheets and manufacturer documentation for STP6NK90Z

    Ersa ST(B,P,W)6NK90Z, STP6NK90ZFP      
    Ersa STP6NK90Z View All Specifications      
    Ersa ST(B,P,W)6NK90Z, STP6NK90ZFP      

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