STMicroelectronics

SCTW90N65G2V  

Single FETs, MOSFETs

SCTW90N65G2V Description

The SCTW90N65G2V is a high-performance Silicon Carbide Field-Effect Transistor (SiCFET) manufactured by STMicroelectronics. This N-Channel MOSFET is designed for high-power applications, offering superior performance and reliability. Key features include a drain-to-source voltage of 650V, continuous drain current of 90A at 25°C, and a maximum power dissipation of 390W. The SCTW90N65G2V is available in a HiP247™ package and is compliant with RoHS3 standards.

SCTW90N65G2V Features

• High Voltage and Current Ratings: With a drain-to-source voltage of 650V and a continuous drain current of 90A at 25°C, the SCTW90N65G2V is ideal for high-power applications.
• Low On-Resistance: The maximum on-resistance (Rds On) of 25mΩ at 50A and 18V ensures efficient power transfer and minimal power loss.
• Silicon Carbide Technology: The SiCFET technology provides faster switching speeds, lower switching losses, and improved thermal stability compared to traditional silicon-based MOSFETs.
• Robust Package: The HiP247™ package offers excellent thermal performance and mechanical stability, making it suitable for demanding applications.
• Compliance with Industry Standards: The SCTW90N65G2V is compliant with RoHS3 standards, ensuring environmental friendliness and regulatory compliance.

SCTW90N65G2V Applications

The SCTW90N65G2V is ideal for a wide range of high-power applications, including:

1. Industrial Motor Drives: The high voltage and current ratings make it suitable for driving industrial motors in variable frequency drives (VFDs).
2. Power Supplies: The low on-resistance and high efficiency of the SCTW90N65G2V make it an excellent choice for power supply applications, such as uninterruptible power supplies (UPS) and power factor correction (PFC) circuits.
3. Renewable Energy Systems: The SCTW90N65G2V can be used in solar inverters and wind turbine converters, where high efficiency and reliability are crucial.
4. Electric Vehicles (EVs): The high voltage and current ratings, combined with the fast switching capabilities of SiCFET technology, make the SCTW90N65G2V suitable for EV charging systems and traction inverters.

Conclusion of SCTW90N65G2V

The SCTW90N65G2V from STMicroelectronics is a high-performance SiCFET that offers superior performance, reliability, and efficiency for high-power applications. Its unique features, such as Silicon Carbide technology and a robust HiP247™ package, make it an ideal choice for demanding applications in industrial motor drives, power supplies, renewable energy systems, and electric vehicles. With its compliance with industry standards and commitment to environmental sustainability, the SCTW90N65G2V is a reliable and efficient solution for your high-power needs.

SCTW90N65G2V Documents

Download datasheets and manufacturer documentation for SCTW90N65G2V

Datasheets :

SCTW90N65G2V      

PCN Packaging :

Standard outer labelling 15/Nov/2023      

HTML Datasheet :

SCTW90N65G2V