STMicroelectronics

STF28N60M2  

Single FETs, MOSFETs

STF28N60M2 is a high voltage N-channel power MOSFET manufactured by STMicroelectronics. It is designed for applications that require high efficiency and fast switching performance.

Description:

The STF28N60M2 is a high voltage N-channel power MOSFET with a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 28A. It has a low on-state resistance (RDS(on)) of 0.65 ohms maximum, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage operation: 600V VDS
• High current capability: 28A continuous drain current
• Low on-state resistance: 0.65 ohms maximum (typical)
• Fast switching performance: 5.5nC gate charge (Qg) and 115ns typical gate delay time (t(gd))
• Avalanche energy rating: 80 Joules
• Built-in body diode for efficient reverse recovery
• Wide operating temperature range: -55°C to +175°C

Applications:

The STF28N60M2 is suitable for a variety of high voltage and high current applications, including:

1. Motor control: Brushless DC (BLDC) motor control, AC motor control, and pump control
2. Power supplies: Offline switch mode power supplies (SMPS), power factor correction (PFC) circuits, and uninterruptible power supply (UPS) systems
3. Renewable energy: Solar panel inverters and wind turbine converters
4. Automotive: Electric vehicle (EV) charging systems, DC-DC converters, and battery management systems
5. Industrial control: Servo drives, robotic control systems, and programmable logic controllers (PLCs)

The STF28N60M2's combination of high voltage, high current, and low on-state resistance make it an ideal choice for applications that require efficient and reliable power switching.

STF28N60M2 Documents

Download datasheets and manufacturer documentation for STF28N60M2

Datasheets :

STF28N60M2      

HTML Datasheet :

STF28N60M2