The STF8NK100Z is a high-performance N-Channel MOSFET from STMicroelectronics, featuring a SuperMESH™ series design. This MOSFET is designed for applications requiring high voltage and current capabilities, with a drain-to-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 6.5A at 25°C. The device is manufactured using advanced MOSFET technology, ensuring excellent performance and reliability.
STF8NK100Z Features
High Voltage and Current Ratings: With a Vdss of 1000V and Id of 6.5A, the STF8NK100Z is suitable for high-power applications.
Low On-Resistance: The maximum Rds(on) at Id, Vgs is 1.85Ω, ensuring efficient power delivery.
Robust Gate Drive: The maximum gate-source voltage (Vgs) is ±30V, providing a wide operating range.
Low Gate Charge: The maximum gate charge (Qg) is 102nC, reducing switching losses and improving efficiency.
Thermal Management: The power dissipation (Pd) is 40W at Tc, allowing for effective heat dissipation in various applications.
Mounting Type: The STF8NK100Z is available in a through-hole package, making it suitable for a wide range of PCB designs.
Compliance: The device is REACH unaffected, RoHS3 compliant, and has an MSL of 1, making it suitable for various industries.
STF8NK100Z Applications
The STF8NK100Z is ideal for applications requiring high voltage and current capabilities, such as:
Power Supplies: The high Vdss and Id ratings make it suitable for power supply designs, including switching power supplies and battery chargers.
Motor Control: The low Rds(on) and high Id ratings enable efficient motor control in applications like electric vehicles and industrial automation.
Industrial Automation: The robust gate drive and high power dissipation capabilities make it suitable for industrial automation applications, such as motor drives and power electronics.
RF Power Amplifiers: The high Vdss rating and low gate charge make it an excellent choice for RF power amplifiers in communication systems.
Conclusion of STF8NK100Z
The STF8NK100Z from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding applications requiring high voltage and current capabilities. Its unique features, such as the SuperMESH™ series design, low on-resistance, and robust gate drive, make it an ideal choice for power supplies, motor control, industrial automation, and RF power amplifiers. With its compliance to industry standards and wide operating range, the STF8NK100Z is a reliable and efficient solution for various high-power applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STF8NK100Z Documents
Download datasheets and manufacturer documentation for STF8NK100Z
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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