STMicroelectronics_STF35N60DM2

STMicroelectronics
STF35N60DM2  
Single FETs, MOSFETs

STMicroelectronics
STF35N60DM2
278-STF35N60DM2
Ersa
STMicroelectronics-STF35N60DM2-datasheets-996743.pdf
MOSFET N-CH 600V 28A TO220FP
In Stock : 35012

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STF35N60DM2 Description

STF35N60DM2 Description

The STF35N60DM2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications that require robust power management and efficient switching. This device is part of the MDmesh™ DM2 series, known for its superior thermal performance and reliability. With a drain-to-source voltage rating of 600V and a continuous drain current of 28A at 25°C, the STF35N60DM2 is well-suited for high-power applications.

STF35N60DM2 Features

  • High Drain-to-Source Voltage (Vdss): 600V, ensuring the device can handle high voltage applications.
  • Continuous Drain Current (Id): 28A at 25°C, providing ample current for power electronics.
  • Low On-Resistance (Rds On): 110mOhm at 14A and 10V, contributing to high efficiency in power conversion.
  • Gate Charge (Qg): 54nC at 10V, enabling fast switching and reducing power loss.
  • Input Capacitance (Ciss): 2400pF at 100V, which is beneficial for high-frequency operation.
  • Gate-Source Voltage (Vgs): ±25V, offering flexibility in gate drive circuits.
  • Mounting Type: Through Hole, facilitating easy integration into existing designs.
  • Package: Tube, which is suitable for various mounting and packaging options.
  • Technology: MOSFET (Metal Oxide), leveraging advanced semiconductor technology for performance and reliability.
  • Compliance: RoHS3 Compliant and REACH Unaffected, ensuring environmental and regulatory compliance.

STF35N60DM2 Applications

The STF35N60DM2 is ideal for applications where high voltage and current handling are critical, such as:

  • Power Supplies: In switch-mode power supplies (SMPS) for efficient power conversion.
  • Industrial Control: For motor drives and control systems requiring high reliability and performance.
  • Automotive Electronics: In battery management systems and electric vehicle charging infrastructure.
  • Renewable Energy: For solar inverters and wind turbine power conditioning systems.

Conclusion of STF35N60DM2

The STF35N60DM2 stands out for its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its robust design and compliance with industry standards make it a preferred choice for engineers looking to build reliable and efficient power electronic systems. With STMicroelectronics' commitment to quality and innovation, the STF35N60DM2 is a reliable component for demanding applications in various industries.

Tech Specifications

Unit Weight
Configuration
Id - Continuous Drain Current
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Channel Mode
Product Status
Fall Time
Supplier Device Package
RoHS
Qg - Gate Charge
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Tradename
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Mfr
Vgs (Max)
Maximum Operating Temperature
Rds On - Drain-Source Resistance
RoHS Status
Moisture Sensitivity Level (MSL)
Mounting Style
Operating Temperature
FET Feature
Vgs - Gate-Source Voltage
ECCN
Typical Turn-Off Delay Time
Transistor Polarity
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Rise Time
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Pd - Power Dissipation
USHTS
Base Product Number
Supplier Package
ECCN (US)
Grade
ECCN (EU)
RoHs compliant

STF35N60DM2 Documents

Download datasheets and manufacturer documentation for STF35N60DM2

Ersa Wafer 15/Feb/2019      
Ersa STF35N60DM2      
Ersa STF35N60DM2      

Shopping Guide

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