STMicroelectronics_STF16N65M5

STMicroelectronics
STF16N65M5  
Single FETs, MOSFETs

STMicroelectronics
STF16N65M5
278-STF16N65M5
Ersa
STMicroelectronics-STF16N65M5-datasheets-8545850.pdf
MOSFET N-CH 650V 12A TO220FP
In Stock : 11702

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STF16N65M5 Description

STF16N65M5 Description

The STF16N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 12A at 25°C, this device is well-suited for demanding power electronics applications.

STF16N65M5 Features

  • High Voltage and Current Handling: The STF16N65M5 can handle a maximum drain-to-source voltage of 650V and a continuous drain current of 12A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: The device features a low on-resistance (Rds(on)) of 299mOhm at 6A and 10V, which helps reduce power dissipation and improve efficiency.
  • Robust Gate Drive: The gate charge (Qg) is 45nC at 10V, ensuring reliable and efficient gate drive operation.
  • Wide Operating Temperature Range: The STF16N65M5 operates over a wide temperature range of -55°C to 150°C, making it suitable for various environmental conditions.
  • Compliance with Industry Standards: The device is compliant with RoHS3 and REACH regulations, ensuring environmental and safety compliance.
  • Through-Hole Mounting: The TO220FP package allows for easy integration into existing through-hole designs.

STF16N65M5 Applications

The STF16N65M5 is ideal for a variety of high-power applications, including:

  • Power Supplies: Its high voltage and current ratings make it suitable for use in power supply designs, such as SMPS (Switched-Mode Power Supplies) and linear regulators.
  • Motor Control: The device's robust performance characteristics make it well-suited for motor control applications, including industrial motor drives and automotive applications.
  • Automotive: The STF16N65M5 can be used in various automotive applications, such as electric power steering and battery management systems, due to its high voltage and temperature ratings.
  • Industrial Control: The device's ability to handle high voltage and current, along with its low on-resistance, makes it suitable for industrial control applications, such as variable frequency drives and inverters.

Conclusion of STF16N65M5

The STF16N65M5 from STMicroelectronics is a versatile and high-performance N-Channel MOSFET, offering excellent voltage and current handling capabilities, low on-resistance, and robust gate drive performance. Its compliance with industry standards and wide operating temperature range make it an ideal choice for a variety of high-power applications, including power supplies, motor control, automotive, and industrial control systems. With its unique features and advantages over similar models, the STF16N65M5 is a reliable and efficient solution for demanding power electronics applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF16N65M5 Documents

Download datasheets and manufacturer documentation for STF16N65M5

Ersa Mult Devices 27/Feb/2019      
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