STMicroelectronics

SCTH100N65G2-7AG

SCTH100N65G2-7AG Description

The SCTH100N65G2-7AG from STMicroelectronics is a high-performance SiCFET (Silicon Carbide) N-channel MOSFET designed for demanding power electronics applications. With a 650V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 95A (Tc), this device delivers superior efficiency and thermal performance compared to traditional silicon-based MOSFETs. Packaged in an H2PAK-7 surface-mount module, it is optimized for automotive-grade (AEC-Q qualified) applications, ensuring reliability under harsh conditions. The RoHS3-compliant and REACH-unaffected device features a low Rds(on) of 26mΩ at 50A, 18V, minimizing conduction losses.

SCTH100N65G2-7AG Features

• SiC Technology: Offers lower switching losses, higher thermal conductivity, and better high-temperature stability than silicon MOSFETs.
• High Power Handling: Supports 360W (Tc) power dissipation, making it ideal for high-power designs.
• Low Gate Charge (Qg): 162nC @ 18V ensures fast switching and reduced drive losses.
• Automotive-Grade: Compliant with stringent automotive reliability standards.
• Low Input Capacitance (Ciss): 3315pF @ 520V enhances high-frequency performance.
• Surface-Mount H2PAK-7 Package: Optimized for compact, high-density PCB layouts.

SCTH100N65G2-7AG Applications

• Electric Vehicle (EV) Power Systems: On-board chargers, DC-DC converters, and traction inverters.
• Industrial Motor Drives: High-efficiency inverters for servo and BLDC motors.
• Renewable Energy: Solar inverters and energy storage systems requiring high-voltage switching.
• Switched-Mode Power Supplies (SMPS): Telecom and server PSUs with high power density.
• Fast Charging Stations: Enables high-power, low-loss switching for rapid EV charging.

Conclusion of SCTH100N65G2-7AG

The SCTH100N65G2-7AG stands out as a high-efficiency, high-reliability SiC MOSFET for next-generation power electronics. Its low Rds(on), fast switching, and automotive-grade robustness make it a top choice for EV, industrial, and renewable energy applications. By leveraging SiC technology, it outperforms silicon counterparts in thermal management and energy efficiency, reducing system costs and improving performance in high-power designs.