STMicroelectronics_STD11N60M6

STMicroelectronics
STD11N60M6  
Single FETs, MOSFETs

STMicroelectronics
STD11N60M6
278-STD11N60M6
Ersa
STMicroelectronics-STD11N60M6-datasheets-798210.pdf
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STD11N60M6 Description

STD11N60M6 Description

The STD11N60M6 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for use in a variety of electronic applications. With a drain-to-source voltage (Vdss) of 600V and a power dissipation of up to 90W, this device offers excellent performance and reliability. The STD11N60M6 is currently in active production, ensuring consistent availability and support for your projects.

STD11N60M6 Features

  • Input Capacitance (Ciss): The STD11N60M6 boasts a maximum input capacitance of 387 pF at 100V, ensuring fast switching speeds and minimal signal distortion.
  • Gate Charge (Qg): With a maximum gate charge of 10.3 nC at 10V, this MOSFET minimizes power loss and heat generation, improving overall efficiency.
  • Rds On (Max): The STD11N60M6 offers a low on-resistance of 520mOhm at 4A and 10V, reducing power dissipation and heat generation.
  • Vgs(th) (Max): This MOSFET has a maximum threshold voltage of 4.75V at 250µA, ensuring reliable operation across a wide range of input voltages.
  • Current - Continuous Drain (Id): The STD11N60M6 can handle continuous drain currents of up to 8A at 25°C, making it suitable for high-current applications.
  • Drive Voltage: The maximum drive voltage for this MOSFET is 10V, ensuring compatibility with a wide range of control circuits.
  • Mounting Type: The STD11N60M6 is available in a surface-mount package, allowing for easy integration into compact designs.

STD11N60M6 Applications

The STD11N60M6 is ideal for use in various applications, including:

  • Power Electronics: Due to its high voltage and current ratings, this MOSFET is well-suited for power electronics applications, such as power supplies and motor control.
  • Automotive: The STD11N60M6's robust performance makes it suitable for automotive applications, including electric vehicle (EV) charging systems and power management.
  • Industrial Control: This MOSFET's high power dissipation and low on-resistance make it an excellent choice for industrial control systems, such as motor drives and inverters.

Conclusion of STD11N60M6

The STD11N60M6 from STMicroelectronics is a high-performance MOSFET that offers excellent technical specifications and performance benefits. Its unique features, such as low on-resistance, high input capacitance, and robust power dissipation, make it an ideal choice for a wide range of applications, including power electronics, automotive, and industrial control. With its active product status and compliance with various industry standards, the STD11N60M6 is a reliable and efficient solution for your electronic design needs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD11N60M6 Documents

Download datasheets and manufacturer documentation for STD11N60M6

Ersa Product Change Notification (PDF)      

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