STMicroelectronics_STI13NM60N

STMicroelectronics
STI13NM60N  
Single FETs, MOSFETs

STMicroelectronics
STI13NM60N
278-STI13NM60N
Ersa
STMicroelectronics-STI13NM60N-datasheets-5379700.pdf
MOSFET N-CH 600V 11A I2PAK
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STI13NM60N Description

STI13NM60N Description

The STI13NM60N is a high-performance N-channel MOSFET from STMicroelectronics, designed to deliver exceptional performance in various electronic applications. This MOSFET features a drain-to-source voltage (Vdss) of 600V, making it suitable for high-voltage applications. With a continuous drain current (Id) of 11A at 25°C, the STI13NM60N can handle significant current loads. Its low on-resistance (Rds On) of 360mOhm at 5.5A and 10V ensures efficient power dissipation, reducing power losses in the system.

STI13NM60N Features

  • High Voltage Tolerance: The STI13NM60N can withstand drain-to-source voltages up to 600V, making it ideal for high-voltage applications.
  • Low On-Resistance: With an Rds On of 360mOhm at 5.5A and 10V, this MOSFET minimizes power dissipation and heat generation.
  • High Current Handling: Capable of handling continuous drain currents up to 11A at 25°C, the STI13NM60N is suitable for applications requiring high current loads.
  • Low Gate Charge: The maximum gate charge (Qg) of 30nC at 10V reduces switching losses and improves efficiency.
  • Robust Package: The I2PAK package provides a robust and reliable solution for high-power applications.
  • Compliance: The STI13NM60N is REACH unaffected, RoHS3 compliant, and EAR99 classified, ensuring compliance with environmental and trade regulations.

STI13NM60N Applications

The STI13NM60N's unique combination of high voltage tolerance, low on-resistance, and high current handling makes it ideal for various applications, including:

  • Power Supplies: Its ability to handle high voltages and currents makes it suitable for power supply designs.
  • Motor Controls: The STI13NM60N can be used in motor control applications, where high voltages and currents are common.
  • Industrial Automation: Its robustness and high performance make it a good fit for industrial automation systems.
  • Automotive Applications: The STI13NM60N can be used in automotive electronics, where high voltages and reliability are crucial.

Conclusion of STI13NM60N

The STI13NM60N from STMicroelectronics is a high-performance N-channel MOSFET that offers a unique combination of high voltage tolerance, low on-resistance, and high current handling. Its robust I2PAK package, compliance with environmental and trade regulations, and suitability for various applications make it an excellent choice for designers looking for a reliable and efficient solution in their high-voltage and high-current applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STI13NM60N Documents

Download datasheets and manufacturer documentation for STI13NM60N

Ersa STF,I,P,U,W13NM60N      
Ersa STI13NM60N View All Specifications      
Ersa STF,I,P,U,W13NM60N      

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