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STMicroelectronics
STB200NF04L-1
278-STB200NF04L-1
PDF Datasheet
MOSFET N-CH 40V 120A I2PAK
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Tech Specifications
Package/Case
TO-262-3
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
4.6mR
Drain to Source Voltage (Vdss)
40V
Fall Time
80ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
6.4nF
STB200NF04L-1 Description
N-Channel 40 V 120A (Tc) 300W (Tc) Through Hole I2PAK
FAQ
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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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