STMicroelectronics

STP150NF55

STP150NF55 Description

The STP150NF55 from STMicroelectronics is an N-channel 55V, 120A power MOSFET housed in a TO-220AB package, designed for high-efficiency power switching applications. Part of the STripFET™ II series, this MOSFET leverages advanced Metal Oxide (MOSFET) technology to deliver low on-resistance (6mΩ @ 60A, 10V) and high current-handling capability, making it ideal for demanding power management tasks. Despite being marked as Obsolete, it remains a robust choice for legacy designs due to its proven reliability and performance.

STP150NF55 Features

• Low Rds(on): 6mΩ @ 60A, 10V ensures minimal conduction losses, improving efficiency in high-current applications.
• High Current Rating: 120A (Tc) continuous drain current supports heavy-load conditions.
• Fast Switching: Gate charge (Qg) of 190nC @ 10V and input capacitance (Ciss) of 4400pF @ 25V enable efficient high-frequency operation.
• Robust Voltage Handling: Vdss of 55V and Vgs(max) of ±20V provide flexibility in various circuit configurations.
• Thermal Performance: 300W (Tc) power dissipation ensures stability under high-power conditions.
• Compliance: ROHS3 Compliant and REACH Unaffected, meeting environmental standards.

STP150NF55 Applications

The STP150NF55 excels in applications requiring high power density and efficiency, such as:

• DC-DC Converters: Optimized for synchronous rectification and buck/boost topologies.
• Motor Drives: Suitable for H-bridge configurations in industrial and automotive systems.
• Power Supplies: Ideal for server, telecom, and industrial SMPS designs.
• Battery Management: Efficiently handles high-current discharge/charge cycles in energy storage systems.

Conclusion of STP150NF55

The STP150NF55 is a high-performance MOSFET offering low Rds(on), high current capability, and excellent thermal management, making it a strong candidate for power electronics designs. While obsolete, its STripFET™ II technology ensures reliable operation in legacy and high-power applications. Engineers seeking a proven solution for high-efficiency switching should consider this MOSFET for its balance of performance and durability.