The STP36NF06FP from STMicroelectronics is an N-channel power MOSFET designed for high-efficiency switching applications. Part of the STripFET™ II series, it features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C, making it suitable for medium-power applications. With a low on-resistance (Rds(on)) of 40mΩ at 15A, 10V, it minimizes conduction losses, enhancing thermal performance. The device operates with a gate threshold voltage (Vgs(th)) of up to 4V and supports a maximum gate-source voltage (Vgs) of ±20V, ensuring robust control in diverse circuits.
Ideal for:
The STP36NF06FP balances performance and cost, offering low conduction losses, thermal resilience, and broad compatibility. While obsolete, its STripFET™ II technology remains competitive for legacy or non-critical designs. Engineers value its TO-220FP package for isolation and heat dissipation, making it a pragmatic choice for medium-power switching applications where efficiency and durability are prioritized.
Download datasheets and manufacturer documentation for STP36NF06FP