The STW54NM65ND from STMicroelectronics is a high-performance N-channel 650V, 49A power MOSFET housed in a TO-247-3 package. Part of the FDmesh™ II series, this device leverages advanced MOSFET (Metal Oxide) technology to deliver low conduction losses and high switching efficiency. With a low on-resistance (Rds(on)) of 65mΩ at 10V gate drive and 24.5A drain current, it ensures minimal power dissipation, making it ideal for high-power applications. Although marked as Obsolete, its robust design and 350W (Tc) power dissipation capability remain relevant for legacy systems and specific industrial uses.
STW54NM65ND Features
High Voltage & Current Rating: 650V Vdss and 49A continuous drain current (Tc) enable use in demanding power circuits.
Fast Switching: Gate charge (Qg) of 188nC @ 10V and input capacitance (Ciss) of 6200pF @ 50V ensure responsive performance in high-frequency applications.
Thermal Robustness: 150°C junction temperature (TJ) and TO-247-3 package enhance heat dissipation.
Reliability: ROHS3 Compliant, REACH Unaffected, and MSL 1 (Unlimited) for environmental and handling resilience.
Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
Motor Drives & Inverters: Efficient power switching in industrial motor control systems.
Renewable Energy Systems: Solar inverters and wind turbine converters requiring high breakdown voltage.
Industrial Automation: High-current switching in robotics and CNC machinery.
Legacy Electronics: Suitable for repairs or upgrades of older high-power designs.
Conclusion of STW54NM65ND
The STW54NM65ND combines high voltage tolerance, low on-resistance, and thermal stability, making it a strong choice for power electronics despite its obsolete status. Its FDmesh™ II technology ensures superior performance in high-efficiency, high-frequency applications, particularly where low conduction losses are critical. While newer alternatives may exist, this MOSFET remains a reliable option for industrial, renewable energy, and high-power switching systems.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
STW54NM65ND Documents
Download datasheets and manufacturer documentation for STW54NM65ND
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