STMicroelectronics

STD100N10F7  

Single FETs, MOSFETs

The STD100N10F7 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of applications, including motor control, power management, and power conversion.

Description:

The STD100N10F7 is an N-channel MOSFET with a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 10A. It has a low on-state resistance (RDS(on)) of 55mΩ, which makes it suitable for use in high-power applications where efficiency is important.

Features:

• N-channel MOSFET
• 100V drain-source voltage (VDS)
• 10A continuous drain current (ID)
• Low on-state resistance (RDS(on)) of 55mΩ
• High switching speed
• Low gate charge
• Avalanche rugged

Applications:

The STD100N10F7 is suitable for use in a variety of applications, including:

• Motor control
• Power management
• Power conversion
• Inverters
• UPS (Uninterruptible Power Supply)
• Industrial control
• Renewable energy systems

Overall, the STD100N10F7 is a high-power MOSFET that offers high efficiency and fast switching speeds, making it a popular choice for a wide range of applications.

STD100N10F7 Documents

Download datasheets and manufacturer documentation for STD100N10F7

Datasheets :

STx100N10F7 DataSheet      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

Other Related Documents :

STD100N10F7 View All Specifications      

HTML Datasheet :

STx100N10F7 DataSheet