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STMicroelectronics
STD100N10F7
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Tech Specifications
STD100N10F7 Description
The STD100N10F7 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of applications, including motor control, power management, and power conversion.
Description:
The STD100N10F7 is an N-channel MOSFET with a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 10A. It has a low on-state resistance (RDS(on)) of 55mΩ, which makes it suitable for use in high-power applications where efficiency is important.
Features:
- N-channel MOSFET
- 100V drain-source voltage (VDS)
- 10A continuous drain current (ID)
- Low on-state resistance (RDS(on)) of 55mΩ
- High switching speed
- Low gate charge
- Avalanche rugged
Applications:
The STD100N10F7 is suitable for use in a variety of applications, including:
- Motor control
- Power management
- Power conversion
- Inverters
- UPS (Uninterruptible Power Supply)
- Industrial control
- Renewable energy systems
Overall, the STD100N10F7 is a high-power MOSFET that offers high efficiency and fast switching speeds, making it a popular choice for a wide range of applications.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.72857 | $7.29 |
| 30+ | $0.68228 | $20.47 |
| 100+ | $0.63257 | $63.26 |
| 500+ | $0.60857 | $304.29 |
| 1000+ | $0.59828 | $598.28 |
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