STMicroelectronics
STD15P6F6AG
Single FETs, MOSFETs
STD15P6F6AG
278-STD15P6F6AG
STMicroelectronics-STD15P6F6AG-datasheets-11097031.pdf
MOSFET P-CH 60V 10A DPAK
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STD15P6F6AG Description
The STD15P6F6AG is a high-performance, low-power, and high-voltage MOSFET from STMicroelectronics. It is designed for use in a wide range of applications, including automotive, industrial, and consumer electronics.
Description:
The STD15P6F6AG is an N-channel MOSFET with a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 15A. It has a low on-state resistance (RDS(ON)) of 4.2mΩ max, which helps to minimize power dissipation and improve efficiency. The device also features a fast switching speed and low gate charge, making it suitable for high-frequency applications.
Features:
- High voltage and current ratings: The STD15P6F6AG can handle a drain-source voltage of up to 60V and a continuous drain current of up to 15A, making it suitable for high-power applications.
- Low on-state resistance: The low RDS(ON) of 4.2mΩ max helps to minimize power dissipation and improve efficiency in the application.
- Fast switching speed: The device has a fast switching speed, which makes it suitable for high-frequency applications.
- Low gate charge: The low gate charge of the device reduces the energy required to drive the gate, improving overall efficiency.
- Avalanche energy withstand: The device can withstand high energy during avalanche conditions, making it suitable for use in applications where high energy transients may occur.
- Built-in protection: The device features built-in protection against over-voltage, over-current, and over-temperature conditions, improving reliability and safety.
Applications:
The STD15P6F6AG is suitable for a wide range of applications, including:
- Automotive: The device can be used in automotive applications such as electric power steering, air conditioning systems, and engine management systems.
- Industrial: The MOSFET can be used in industrial applications such as motor control, power supplies, and battery management systems.
- Consumer electronics: The device can be used in consumer electronics applications such as power adapters, chargers, and LED drivers.
- Telecommunications: The STD15P6F6AG can be used in telecommunications equipment such as power supplies and signal processing systems.
- Renewable energy: The MOSFET can be used in renewable energy systems such as solar power inverters and wind turbine converters.
Overall, the STD15P6F6AG is a versatile and high-performance MOSFET that offers excellent electrical characteristics and built-in protection features, making it suitable for a wide range of applications.
Tech Specifications
Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Supplier Temperature Grade
Rds On (Max) @ Id, Vgs
Standard Package Name
Typical Reverse Recovery Charge (nC)
Mounting
Qualification
Rise Time
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Typical Reverse Recovery Time (ns)
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Vgs (Max)
Maximum Operating Temperature
RoHS Status
SVHC Exceeds Threshold
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Maximum Positive Gate Source Voltage (V)
Mfr
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Typical Turn-Off Delay Time
Package Length
Series
Operating Junction Temperature (°C)
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant
STD15P6F6AG Documents
Download datasheets and manufacturer documentation for STD15P6F6AG
Mult Devices Testing 10/May/2018 STD15P6F6AG Datasheet Mult Dev Inner Box Chg 9/Dec/2021 STD15P6F6AG Datasheet Related Parts
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