STMicroelectronics

SCTW35N65G2V

The SCTW35N65G2V is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including high voltage switching and power management circuits.

Description:

The SCTW35N65G2V is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 35A. It features a low on-state resistance (RDS(on)) of 2.5mΩ max, which helps to minimize power dissipation and improve efficiency in switching applications.

Features:

• N-channel, enhancement mode MOSFET
• Drain-source voltage (VDS) of 650V
• Continuous drain current (ID) of 35A
• Low on-state resistance (RDS(on)) of 2.5mΩ max
• High input impedance
• Fast switching speed
• Suitable for use in high voltage switching and power management circuits

Applications:

The SCTW35N65G2V is suitable for use in a wide range of applications, including:

1. High voltage switching circuits
2. Power management circuits
3. Motor control applications
4. Inverter circuits
5. Battery protection circuits
6. Industrial control systems
7. Automotive applications

Overall, the SCTW35N65G2V is a high performance MOSFET transistor that offers excellent electrical characteristics and is suitable for use in a wide range of high voltage switching and power management applications.