STMicroelectronics
STB57N65M5  
Single FETs, MOSFETs

STMicroelectronics
STB57N65M5
278-STB57N65M5
Ersa
STMicroelectronics-STB57N65M5-datasheets-11854725.pdf
MOSFET N-CH 650V 42A D2PAK
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STB57N65M5 Description

STMicroelectronics' STB57N65M5 is a high-power, high-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a wide range of applications. Here is a description of the model, its features, and potential applications:

Model: STB57N65M5

Description:

The STB57N65M5 is a N-channel MOSFET that offers high power density and low on-state resistance (RDS(on)). It is designed with advanced trench technology, which provides improved thermal performance and better electrical characteristics compared to traditional planar MOSFETs.

Features:

  1. High Voltage Rating: The device is rated for a maximum drain-source voltage (VDS) of 650V, making it suitable for high-voltage applications.
  2. Low On-State Resistance: With a low RDS(on) of 4.5 mΩ (typical) at a gate-source voltage (VGS) of 10V, it offers high efficiency and reduced power dissipation.
  3. High Power Density: The STB57N65M5 is designed to handle high power applications with its high current capability.
  4. Advanced Trench Technology: This technology enhances the device's thermal performance and provides better switching characteristics.
  5. Built-in Diode: The MOSFET features a fast-recovery, integrated body diode for efficient energy conversion in bidirectional applications.
  6. Robustness: The device is designed with a high level of robustness to withstand high energy pulses and transients.

Applications:

  1. Motor Control: The STB57N65M5 is suitable for driving high-power motors in applications like electric vehicles, industrial machinery, and pumps.
  2. Power Supplies: It can be used in switch-mode power supplies (SMPS) and other power conversion systems that require high efficiency and low power losses.
  3. Solar Energy Systems: The MOSFET's high voltage and low on-state resistance make it ideal for use in solar panel power conditioning systems.
  4. Battery Chargers: It can be used in high-power battery charging systems, including electric vehicle charging stations and industrial battery chargers.
  5. UPS Systems: The STB57N65M5 can be employed in uninterruptible power supply (UPS) systems to provide reliable power during outages or fluctuations.
  6. Inverters: It is suitable for use in both standalone and grid-tied inverters for converting DC power to AC power in renewable energy systems.

The STB57N65M5 is a versatile MOSFET that can be integrated into various high-power electronic systems, providing improved efficiency, reliability, and performance.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB57N65M5 Documents

Download datasheets and manufacturer documentation for STB57N65M5

Ersa STx57N65M5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB57N65M5 View All Specifications      
Ersa STx57N65M5      
Ersa STx57N65M5 24/Nov/2023       D2PAK Lead Modification 04/Oct/2013      

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