STMicroelectronics
STL90N10F7
Single FETs, MOSFETs
STL90N10F7
278-STL90N10F7
STMicroelectronics-STL90N10F7-datasheets-10740491.pdf
MOSFET N-CH 100V 70A POWERFLAT
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STL90N10F7 Description
STMicroelectronics STL90N10F7 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a wide range of applications, including automotive, industrial, and consumer electronics.
Description:
The STL90N10F7 is an N-channel enhancement mode MOSFET with a voltage rating of 100V and a continuous drain current of 90A. It features a low on-state resistance (RDS(on)) of 4.5mΩ, which helps to minimize power dissipation and improve efficiency in switching applications.
Features:
- High-power MOSFET with 100V voltage rating and 90A continuous drain current
- Low on-state resistance (RDS(on)) of 4.5mΩ for improved efficiency and reduced power dissipation
- Enhancement mode operation for ease of use in various applications
- Suitable for use in a wide range of applications, including automotive, industrial, and consumer electronics
Applications:
- Motor control in automotive and industrial applications
- Power switching in consumer electronics, such as power supplies and battery chargers
- Load switching in automotive systems, such as headlights, windshield wipers, and HVAC control
- DC-DC converters for power management in various electronic devices
- Inverters for renewable energy systems, such as solar panels and wind turbines
The STL90N10F7's high-power capabilities, low on-state resistance, and wide range of applications make it a versatile choice for engineers designing power electronic systems.
Tech Specifications
Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STL90N10F7 Documents
Download datasheets and manufacturer documentation for STL90N10F7
STL90N10F7 Mult Dev Inner Box Chg 9/Dec/2021 STL90N10F7 Related Parts
Shopping Guide
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