STMicroelectronics_STP110N10F7

STMicroelectronics
STP110N10F7  
Single FETs, MOSFETs

STMicroelectronics
STP110N10F7
278-STP110N10F7
Ersa
STMicroelectronics-STP110N10F7-datasheets-1514930.pdf
MOSFET N CH 100V 110A TO-220
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STP110N10F7 Description

STP110N10F7 Description

The STP110N10F7 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high power and efficiency. This N-channel device features a drain-to-source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of up to 110A at 25°C. With a maximum power dissipation of 150W, the STP110N10F7 is suitable for demanding applications in various industries.

STP110N10F7 Features

  • DeepGATE™, STripFET™ VII Series: The STP110N10F7 belongs to STMicroelectronics' advanced series of MOSFETs, offering superior performance and reliability.
  • Low Rds On: With a maximum Rds On of 7mOhm at 55A and 10V, the STP110N10F7 provides low conduction losses, improving efficiency in power applications.
  • High Input Capacitance (Ciss): The device has a maximum input capacitance of 5500 pF at 50V, ensuring fast switching speeds and reduced parasitic effects.
  • Low Gate Charge (Qg): The maximum gate charge is 60 nC at 10V, contributing to lower switching losses and improved efficiency.
  • Robust Voltage Ratings: The STP110N10F7 can withstand a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA.
  • Mounting Type: The device is available in a through-hole mounting type, offering ease of integration and flexibility in design.
  • Compliance: The STP110N10F7 is compliant with RoHS3 and REACH regulations, making it suitable for environmentally conscious applications.

STP110N10F7 Applications

The STP110N10F7 is ideal for various high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STP110N10F7 is suitable for power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Industrial Control: The device's robust performance makes it suitable for motor control applications, such as electric vehicles (EVs), robotics, and industrial automation systems.
  • Renewable Energy: The STP110N10F7 can be used in solar inverters and wind turbine converters, where high efficiency and reliability are critical.

Conclusion of STP110N10F7

The STP110N10F7 is a versatile and high-performance MOSFET from STMicroelectronics, offering a combination of low Rds On, high input capacitance, and robust voltage ratings. Its compliance with RoHS3 and REACH regulations, along with its suitability for various high-power applications, makes it an excellent choice for designers looking for a reliable and efficient solution in power electronics.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP110N10F7 Documents

Download datasheets and manufacturer documentation for STP110N10F7

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