STMicroelectronics_STP110N10F7
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STMicroelectronics
STP110N10F7

278-STP110N10F7
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N-Channel 100V 110A 7mR Power MOSFET TO-220
32 Weeks

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Tech Specifications

Package / Case
TO-220-3
Continuous Drain Current (ID)
110A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
6mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
7mR
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
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STP110N10F7 Description

STP110N10F7 Description

The STP110N10F7 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high power and efficiency. This N-channel device features a drain-to-source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of up to 110A at 25°C. With a maximum power dissipation of 150W, the STP110N10F7 is suitable for demanding applications in various industries.

STP110N10F7 Features

  • DeepGATE™, STripFET™ VII Series: The STP110N10F7 belongs to STMicroelectronics' advanced series of MOSFETs, offering superior performance and reliability.
  • Low Rds On: With a maximum Rds On of 7mOhm at 55A and 10V, the STP110N10F7 provides low conduction losses, improving efficiency in power applications.
  • High Input Capacitance (Ciss): The device has a maximum input capacitance of 5500 pF at 50V, ensuring fast switching speeds and reduced parasitic effects.
  • Low Gate Charge (Qg): The maximum gate charge is 60 nC at 10V, contributing to lower switching losses and improved efficiency.
  • Robust Voltage Ratings: The STP110N10F7 can withstand a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA.
  • Mounting Type: The device is available in a through-hole mounting type, offering ease of integration and flexibility in design.
  • Compliance: The STP110N10F7 is compliant with RoHS3 and REACH regulations, making it suitable for environmentally conscious applications.

STP110N10F7 Applications

The STP110N10F7 is ideal for various high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STP110N10F7 is suitable for power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Industrial Control: The device's robust performance makes it suitable for motor control applications, such as electric vehicles (EVs), robotics, and industrial automation systems.
  • Renewable Energy: The STP110N10F7 can be used in solar inverters and wind turbine converters, where high efficiency and reliability are critical.

Conclusion of STP110N10F7

The STP110N10F7 is a versatile and high-performance MOSFET from STMicroelectronics, offering a combination of low Rds On, high input capacitance, and robust voltage ratings. Its compliance with RoHS3 and REACH regulations, along with its suitability for various high-power applications, makes it an excellent choice for designers looking for a reliable and efficient solution in power electronics.

FAQ

What is STP110N10F7?
STP110N10F7 is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
What voltage specification is listed for STP110N10F7?
What operating temperature range does STP110N10F7 support?
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Availability (In Stock : 124 )
Quantity Unit Price Ext. Price
1+ $1.56720 $1.57
10+ $1.36020 $13.60
50+ $1.24690 $62.34
100+ $1.11870 $111.87
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