STMicroelectronics_STF10N95K5

STMicroelectronics
STF10N95K5  
Single FETs, MOSFETs

STMicroelectronics
STF10N95K5
278-STF10N95K5
Ersa
STMicroelectronics-STF10N95K5-datasheets-8441180.pdf
MOSFET N-CH 950V 8A TO220FP
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STF10N95K5 Description

STF10N95K5 Description

The STF10N95K5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications requiring high voltage and current capabilities. This device features a drain-to-source voltage (Vdss) of 950V, a continuous drain current (Id) of 8A at 25°C, and a maximum power dissipation of 30W. The STF10N95K5 is part of the SuperMESH5™ series, known for its excellent performance and reliability.

STF10N95K5 Features

  • Technology: MOSFET (Metal Oxide), offering high efficiency and low power loss.
  • Input Capacitance (Ciss): 630 pF @ 100V, ensuring fast switching and minimal signal distortion.
  • Gate Charge (Qg): 22 nC @ 10V, reducing power consumption during switching.
  • Vgs (Max): ±30V, providing flexibility in gate voltage requirements.
  • Rds On (Max): 800mOhm @ 4A, 10V, ensuring low on-resistance and high efficiency.
  • Vgs(th) (Max): 5V @ 100µA, enabling low-threshold operation.
  • Mounting Type: Through Hole, suitable for various PCB designs.
  • Package: Tube, offering protection and ease of handling.
  • REACH Status: REACH Unaffected, compliant with environmental regulations.
  • RoHS Status: ROHS3 Compliant, adhering to.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), allowing for flexible storage and handling.

STF10N95K5 Applications

The STF10N95K5 is ideal for applications requiring high voltage and current capabilities, such as:

  • Power Supplies: Utilizing its high Vdss and Id ratings, the STF10N95K5 is suitable for power supply designs.
  • Motor Controls: The device's low Rds On and high Id make it an excellent choice for motor control applications.
  • Industrial Automation: Its robust performance and high power dissipation capabilities make it suitable for industrial automation systems.

Conclusion of STF10N95K5

The STF10N95K5 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering excellent technical specifications and performance benefits. Its unique features, such as low Rds On, high Vdss, and compliance with environmental regulations, make it an ideal choice for a wide range of applications, including power supplies, motor controls, and industrial automation. With its robust performance and reliability, the STF10N95K5 is a valuable addition to any high-voltage and high-current electronic design.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STF10N95K5 Documents

Download datasheets and manufacturer documentation for STF10N95K5

Ersa ST(B,F,P,W)10N95K5      
Ersa ST(B,F,P,W)10N95K5      

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