STMicroelectronics_STH270N8F7-6

STMicroelectronics
STH270N8F7-6  
Single FETs, MOSFETs

STMicroelectronics
STH270N8F7-6
278-STH270N8F7-6
Ersa
STMicroelectronics-STH270N8F7-6-datasheets-454613.pdf
MOSFET N-CH 80V 180A H2PAK
In Stock : 3860

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STH270N8F7-6 Description

STH270N8F7-6 Description

The STH270N8F7-6 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high efficiency and reliability. This device features a DeepGATE™ and STripFET™ VII series technology, ensuring superior performance and low on-resistance. With a maximum drain-source voltage of 80V and a continuous drain current of 180A at 25°C, the STH270N8F7-6 is ideal for high-power applications.

STH270N8F7-6 Features

  • Technology: MOSFET (Metal Oxide) with DeepGATE™ and STripFET™ VII series for enhanced performance.
  • Drain to Source Voltage (Vdss): 80V, suitable for high-voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 180A, ensuring high current handling capabilities.
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V, providing low on-resistance for efficient power delivery.
  • Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10V, reducing switching losses.
  • Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50V, enabling fast switching speeds.
  • Mounting Type: Surface Mount,PCB。
  • Power Dissipation (Max): 315W (Tc), suitable for high-power applications.
  • RoHS Status: ROHS3 Compliant, ensuring environmental compliance.
  • REACH Status: REACH Unaffected, adhering to chemical regulations.

STH270N8F7-6 Applications

The STH270N8F7-6 is ideal for a variety of high-power applications, including:

  1. Industrial Motor Controls: Its high current and voltage ratings make it suitable for motor drive applications.
  2. Power Supplies: The low on-resistance and high efficiency of this MOSFET make it ideal for power supply designs.
  3. Automotive Electronics: The robustness and reliability of the STH270N8F7-6 make it suitable for automotive applications, such as electric vehicle charging systems.
  4. Renewable Energy Systems: Its high-power capabilities make it suitable for solar inverters and wind turbine control systems.

Conclusion of STH270N8F7-6

The STH270N8F7-6 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding applications requiring high efficiency and reliability. Its unique features, such as DeepGATE™ and STripFET™ VII technology, provide superior performance and low on-resistance, making it an ideal choice for high-power applications in various industries. With its compliance with environmental and chemical regulations, the STH270N8F7-6 is a reliable and efficient solution for your high-power electronic design needs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STH270N8F7-6 Documents

Download datasheets and manufacturer documentation for STH270N8F7-6

Ersa Mult Dev A/T Chgs 14/Mar/2023      
Ersa STH270N8F7-2/6, STP270N8F7      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STH270N8F7-2/6, STP270N8F7      
Ersa STP270N8F7 24/Mar/2021      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service