STMicroelectronics_STU2LN60K3
original

STMicroelectronics
STU2LN60K3

278-STU2LN60K3
PDF Datasheet
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in IPAK package

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Tech Specifications

Package/Case
TO-251-3
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
4R
Drain to Source Voltage (Vdss)
600V
Fall Time
21ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
235pF
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STU2LN60K3 Description

N-Channel 600 V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

FAQ

What package or case is STU2LN60K3 available in?
STU2LN60K3 is available in the TO-251-3 package / case.
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