STMicroelectronics_STU3N62K3
original

STMicroelectronics
STU3N62K3

278-STU3N62K3
PDF Datasheet
620V N-Channel Power MOSFET, 2.7A, 2.5 Ohm, IPAK
13 Weeks

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Tech Specifications

Package/Case
TO-251
Continuous Drain Current (ID)
2.7A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
2.5R
Drain to Source Voltage (Vdss)
620V
Fall Time
15.6ns
Gate to Source Voltage (Vgs)
30V
Height
6.9mm
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STU3N62K3 Description

N-Channel 620 V 2.7A (Tc) 45W (Tc) Through Hole IPAK

FAQ

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STU3N62K3 is available in the TO-251 package / case.
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