STMicroelectronics_STN3N45K3

STMicroelectronics
STN3N45K3  
Single FETs, MOSFETs

STMicroelectronics
STN3N45K3
278-STN3N45K3
Ersa
STMicroelectronics-STN3N45K3-datasheets-1389493.pdf
MOSFET N-CH 450V 600MA SOT223
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    STN3N45K3 Description

    STN3N45K3 Description

    The STN3N45K3 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power management and efficient switching. This MOSFET features a drain-to-source voltage of 450V, making it suitable for high-voltage applications. With a continuous drain current of 600mA at 25°C, it can handle significant power loads while maintaining low power dissipation of up to 3W at ambient temperature. The STN3N45K3 operates within a wide gate-source voltage range of ±30V, ensuring compatibility with various control systems.

    STN3N45K3 Features

    • High Drain-to-Source Voltage (Vdss): 450V for reliable operation in high-voltage circuits.
    • Low Power Dissipation: Maximum of 3W, suitable for compact designs.
    • Robust Gate Charge (Qg): Maximum of 9.5nC @ 10V for fast switching.
    • Low Input Capacitance (Ciss): Maximum of 164pF @ 50V for reduced parasitic effects.
    • Superior Series (SuperMESH3™): Known for high efficiency and performance.
    • Low Rds On (Max): 4Ohm @ 600mA, 10V for minimal power loss during conduction.
    • Wide Operating Temperature: Up to 150°C (TJ) for use in harsh environments.
    • Compliance: RoHS3 compliant and REACH unaffected, adhering to environmental standards.

    STN3N45K3 Applications

    The STN3N45K3 is ideal for a variety of applications where high voltage and efficient power management are critical:

    • Power Supplies: In switch-mode power supplies for efficient voltage regulation.
    • Motor Controls: For driving and controlling electric motors in industrial and automotive applications.
    • Consumer Electronics: In high-voltage circuits of TVs, computers, and other electronics for reliable performance.
    • Automotive Systems: For power window lifts, seat controls, and other high-voltage components.

    Conclusion of STN3N45K3

    The STN3N45K3 stands out with its high drain-to-source voltage and low Rds On, making it an excellent choice for high-voltage, high-efficiency applications. Its compliance with environmental standards and robust performance characteristics make it a reliable component for a wide range of electronic devices. Whether used in power supplies, motor controls, or consumer electronics, the STN3N45K3 delivers superior performance and reliability.

    Tech Specifications

    Unit Weight
    Configuration
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Type
    Tab
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STN3N45K3 Documents

    Download datasheets and manufacturer documentation for STN3N45K3

    Ersa Carrier/Cover Tape Supplier 23/Sep/2021      
    Ersa STN3N45K3 Datasheet      
    Ersa STN3N45K3 View All Specifications      
    Ersa STN3N45K3 Datasheet      

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