STMicroelectronics
STP36N60M6  
Single FETs, MOSFETs

STMicroelectronics
STP36N60M6
278-STP36N60M6
Ersa
STMicroelectronics-STP36N60M6-datasheets-13076610.pdf
MOSFET N-CHANNEL 600V 30A TO220
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STP36N60M6 Description

STP36N60M6 Description

The STP36N60M6 is a high-performance MOSFET N-CHANNEL 600V 30A TO220 transistor manufactured by STMicroelectronics. This device is designed for applications requiring high voltage and current handling capabilities. With its advanced MOSFET technology, the STP36N60M6 offers superior performance and reliability in various electronic systems.

STP36N60M6 Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent switching performance and high efficiency.
  • Drain to Source Voltage (Vdss): 600V - Ideal for high-voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc) - Capable of handling high current loads.
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V - Offers low on-resistance for efficient power dissipation.
  • Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V - Minimizes switching losses and improves efficiency.
  • Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V - Ensures fast switching and reduced parasitic effects.
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA - Provides a wide range of gate drive options.
  • Drive Voltage (Max Rds On, Min Rds On): 10V - Facilitates easy integration with various control circuits.
  • Power Dissipation (Max): 208W (Tc) - Suitable for power-intensive applications.
  • Mounting Type: Through Hole - Allows for easy installation and heat dissipation.
  • Package: Tube - Offers protection and convenience during handling and storage.
  • REACH Status: REACH Unaffected - Complies with European chemical regulations.
  • RoHS Status: ROHS3 Compliant - Meets environmental standards for hazardous substances.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Resistant to moisture, ensuring long-term reliability.

STP36N60M6 Applications

The STP36N60M6 is ideal for various high-voltage and high-current applications, including:

  1. Power Supplies: Utilized in switch-mode power supplies (SMPS) for efficient voltage regulation and switching.
  2. Industrial Control Systems: Employed in motor drives and control circuits for reliable operation in harsh environments.
  3. Automotive Electronics: Used in electric vehicle (EV) charging systems and battery management systems for high efficiency and safety.
  4. Renewable Energy Systems: Integrated into solar inverters and wind turbine converters for optimal energy conversion and control.

Conclusion of STP36N60M6

The STP36N60M6 is a robust and reliable MOSFET N-CHANNEL 600V 30A TO220 transistor from STMicroelectronics. Its advanced technology, high voltage and current handling capabilities, and compliance with environmental standards make it an excellent choice for a wide range of high-performance applications. With its unique features and advantages, the STP36N60M6 stands out as a preferred solution in the electronics industry.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP36N60M6 Documents

Download datasheets and manufacturer documentation for STP36N60M6

Ersa STP36N60M6, STW36N60M6      
Ersa STP36N60M6, STW36N60M6      

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