STMicroelectronics_STF14NM50N

STMicroelectronics
STF14NM50N  
Single FETs, MOSFETs

STMicroelectronics
STF14NM50N
278-STF14NM50N
Ersa
STMicroelectronics-STF14NM50N-datasheets-7711602.pdf
MOSFET N-CH 500V 12A TO220FP
In Stock : 1850

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STF14NM50N Description

STF14NM50N Description

The STF14NM50N is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding power electronics applications. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 12A at 25°C, this device is capable of handling significant power loads. It features a low on-resistance (Rds On) of 320mOhm at 6A and 10V, ensuring high efficiency and minimal power loss. The STF14NM50N operates within a wide gate-source voltage range of ±25V, providing flexibility in various circuit designs.

STF14NM50N Features

  • High Voltage and Current Ratings: The STF14NM50N boasts a 500V drain-to-source voltage and a 12A continuous drain current, making it suitable for high-power applications.
  • Low On-Resistance: With an Rds On of 320mOhm at 6A and 10V, this MOSFET minimizes power dissipation and heat generation.
  • Wide Gate-Source Voltage Range: The ±25V Vgs range allows for compatibility with various gate drive circuits.
  • Low Gate Charge: The maximum gate charge (Qg) of 27nC @ 10V reduces switching losses and improves efficiency.
  • Robust Construction: The through-hole TO220FP package provides excellent thermal dissipation and mechanical stability.
  • Compliance and Certifications: The STF14NM50N is REACH unaffected, RoHS3 compliant, and EAR99 classified, ensuring regulatory compliance and environmental responsibility.

STF14NM50N Applications

The STF14NM50N is ideal for a variety of high-power applications where efficiency, reliability, and performance are critical:

  1. Power Supplies: Its high voltage and current ratings make it suitable for power supply designs, including switching power supplies and battery chargers.
  2. Motor Controls: The STF14NM50N's low on-resistance and high current capability make it an excellent choice for motor control applications, such as electric vehicles and industrial motor drives.
  3. Industrial Automation: In industrial automation systems, the STF14NM50N can be used for controlling high-power actuators and other electromechanical devices.
  4. Renewable Energy: This MOSFET is well-suited for renewable energy applications, such as solar inverters and wind turbine power electronics.

Conclusion of STF14NM50N

The STF14NM50N from STMicroelectronics is a powerful and versatile N-Channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and a wide gate-source voltage range. Its robust construction, compliance with industry standards, and suitability for a wide range of high-power applications make it an excellent choice for engineers designing power electronics systems. With its unique features and advantages, the STF14NM50N stands out as a reliable and efficient solution for demanding power management tasks.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF14NM50N Documents

Download datasheets and manufacturer documentation for STF14NM50N

Ersa STF,I,P14NM50N      
Ersa Box Label Chg 28/Jul/2016      
Ersa STF14NM50N View All Specifications      
Ersa STF,I,P14NM50N      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service