STMicroelectronics_STO36N60M6

STMicroelectronics
STO36N60M6  
Single FETs, MOSFETs

STMicroelectronics
STO36N60M6
278-STO36N60M6
Ersa
STMicroelectronics-STO36N60M6-datasheets-5439168.pdf
N-channel 600 V, 85 mOhm typ.,
In Stock : 590

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STO36N60M6 Description

STO36N60M6 Description

The STO36N60M6 is a high-performance N-channel MOSFET from STMicroelectronics, designed for demanding applications that require robustness and efficiency. This MOSFET is part of the MDmesh™ M6 series and is known for its excellent electrical characteristics and reliability. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 30A at 25°C, the STO36N60M6 is capable of handling high power applications. It features a low on-resistance (Rds On) of 99mOhm at 15A and 10V, which contributes to its high efficiency in power management.

STO36N60M6 Features

  • Technology: Utilizing advanced MOSFET (Metal Oxide) technology, the STO36N60M6 offers superior performance and reliability.
  • Low On-Resistance: With a maximum Rds On of 99mOhm at 15A and 10V, the STO36N60M6 minimizes power loss and heat generation.
  • High Input Capacitance: The maximum input capacitance (Ciss) of 1960 pF at 100V ensures fast switching and reduced distortion.
  • Low Gate Charge: The maximum gate charge (Qg) of 44.3 nC at 10V contributes to the device's fast switching capabilities.
  • Robust Voltage Tolerance: Capable of withstanding a maximum gate-source voltage (Vgs) of ±25V, the STO36N60M6 is suitable for a wide range of applications.
  • Mounting Type: Surface mount technology allows for compact and efficient integration into various electronic devices.
  • Environmental Compliance: The STO36N60M6 is RoHS3 compliant, making it an environmentally friendly choice for electronic designs.

STO36N60M6 Applications

The STO36N60M6 is ideal for applications that demand high efficiency and robust performance, such as:

  • Power Supplies: Due to its high voltage and current ratings, the STO36N60M6 is perfect for power supply designs where reliability and efficiency are crucial.
  • Industrial Automation: The device's ability to handle high power and voltage makes it suitable for motor control and other automation tasks.
  • Electric Vehicles: The STO36N60M6 can be used in the power management systems of electric vehicles, where high voltage and current capabilities are essential.
  • Renewable Energy Systems: In solar inverters and wind power systems, the STO36N60M6 can efficiently manage power conversion and distribution.

Conclusion of STO36N60M6

The STO36N60M6 from STMicroelectronics is a powerful and efficient N-channel MOSFET that stands out for its high voltage and current ratings, low on-resistance, and fast switching capabilities. Its unique features make it an excellent choice for a variety of high-power applications, including power supplies, industrial automation, electric vehicles, and renewable energy systems. With its compliance to environmental standards and robust performance, the STO36N60M6 is a reliable component for the next generation of electronic designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STO36N60M6 Documents

Download datasheets and manufacturer documentation for STO36N60M6

Ersa Product Change Notification (PDF)      
Ersa TO-LL and MDmesh M6 the latest breakthrough in high-level telecom SMPS (PDF)      

Shopping Guide

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