The STW33N60M6 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Part of the MDmesh™ M6 series, it features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 25A at 25°C, making it suitable for high-voltage switching. The device utilizes advanced Metal Oxide Semiconductor (MOSFET) technology, ensuring low conduction losses and high efficiency. Packaged in a TO-247 through-hole format, it offers robust thermal performance and mechanical durability. The STW33N60M6 is RoHS3 compliant and REACH unaffected, meeting stringent environmental and safety standards.
The STW33N60M6 is ideal for high-efficiency power conversion systems, including:
The STW33N60M6 stands out as a high-voltage, high-current MOSFET with superior switching performance and thermal management. Its MDmesh™ M6 technology and TO-247 packaging make it a preferred choice for power electronics designers seeking efficiency, reliability, and compliance with environmental standards. Whether in industrial, renewable energy, or automotive applications, this MOSFET delivers consistent performance under demanding conditions.
Download datasheets and manufacturer documentation for STW33N60M6