STMicroelectronics

SCTW40N120G2V  

Single FETs, MOSFETs

SCTW40N120G2V Description

The SCTW40N120G2V is a high-performance Silicon Carbide (SiC) Power MOSFET manufactured by STMicroelectronics. This device is designed to deliver exceptional performance in high-voltage, high-power applications. With a maximum drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 36 A at 25°C, the SCTW40N120G2V is ideal for demanding applications that require high efficiency and reliability.

SCTW40N120G2V Features

• Silicon Carbide Technology: The SCTW40N120G2V leverages SiC technology, which offers superior thermal conductivity and faster switching speeds compared to traditional silicon-based MOSFETs. This results in lower power dissipation and improved efficiency.
• High Input Capacitance: With a maximum input capacitance (Ciss) of 1233 pF at 800 V, the SCTW40N120G2V provides fast charging and discharging capabilities, making it suitable for high-frequency applications.
• Low Gate Charge: The maximum gate charge (Qg) of 61 nC at 18 V ensures efficient gate drive and reduced power consumption in the gate circuit.
• Low Rds On: The maximum Rds On of 100 mΩ at 20 A and 18 V contributes to low conduction losses and high efficiency in power conversion applications.
• High Power Dissipation: The SCTW40N120G2V can dissipate up to 278 W of power, making it suitable for high-power applications.
• Robust Package: The HiP247™ package provides excellent thermal performance and mechanical robustness, ensuring reliable operation in harsh environments.

SCTW40N120G2V Applications

The SCTW40N120G2V is ideal for a wide range of high-voltage, high-power applications, including:

• Electric Vehicle (EV) Charging Systems: The high voltage and low Rds On make the SCTW40N120G2V suitable for EV charging systems, where efficiency and reliability are critical.
• Renewable Energy Systems: The SCTW40N120G2V can be used in solar inverters and wind power converters, where high efficiency and low power dissipation are essential.
• Industrial Power Supplies: The SCTW40N120G2V is well-suited for high-voltage power supplies in industrial applications, such as motor drives and power factor correction circuits.
• Railway Systems: The SCTW40N120G2V can be used in traction drives and auxiliary power supplies in railway systems, where high voltage and power are required.

Conclusion of SCTW40N120G2V

The SCTW40N120G2V is a high-performance Silicon Carbide Power MOSFET that offers exceptional performance in high-voltage, high-power applications. Its unique features, such as low Rds On, high input capacitance, and low gate charge, make it an ideal choice for demanding applications where efficiency and reliability are critical. With its robust package and wide range of applications, the SCTW40N120G2V is a versatile solution for power electronics engineers looking to optimize their designs.

SCTW40N120G2V Documents

Download datasheets and manufacturer documentation for SCTW40N120G2V

PCN :

Product Change Notification 2024-12-02 (PDF)       Product Change Notification (PDF)