The STP160N3LL is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high current and voltage handling capabilities. With a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 120A at 25°C, this device is well-suited for power electronics applications. The STP160N3LL features a low on-resistance (Rds On) of 3.2mOhm at 60A and 10V, ensuring efficient power dissipation and minimal power loss. The device is mounted through hole and is packaged in a tube, making it easy to integrate into various electronic systems.
STP160N3LL Features
High Voltage and Current Handling: The STP160N3LL can handle a drain-source voltage of 30V and a continuous drain current of 120A at 25°C, making it ideal for high-power applications.
Low On-Resistance: With an Rds On of 3.2mOhm at 60A and 10V, the STP160N3LL offers efficient power dissipation and minimal power loss.
Robust Gate Charge and Input Capacitance: The device has a maximum gate charge (Qg) of 42nC at 4.5V and an input capacitance (Ciss) of 3500pF at 25V, ensuring reliable operation and fast switching.
Wide Operating Voltage Range: The STP160N3LL supports a maximum gate-source voltage (Vgs) of ±20V, providing flexibility in various applications.
Compliance with Industry Standards: The device is compliant with the ROHS3 standard, making it suitable for environmentally friendly applications. It also has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering.
STP160N3LL Applications
The STP160N3LL is ideal for a wide range of applications, including:
Power Electronics: Due to its high voltage and current handling capabilities, the STP160N3LL is well-suited for power electronics applications such as power supplies, motor drives, and battery management systems.
Industrial Automation: The device's robust performance makes it suitable for industrial automation applications, including motor control and power distribution.
Automotive Applications: The STP160N3LL can be used in automotive applications, such as electric vehicle charging systems and power management systems, due to its high reliability and compliance with industry standards.
Conclusion of STP160N3LL
The STP160N3LL from STMicroelectronics is a high-performance N-Channel MOSFET that offers excellent voltage and current handling capabilities, making it an ideal choice for power electronics and industrial applications. Its low on-resistance, robust gate charge, and compliance with industry standards make it a reliable and efficient solution for various high-power applications. With its wide operating voltage range and moisture sensitivity level, the STP160N3LL is a versatile and reliable choice for engineers designing high-performance electronic systems.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Material
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STP160N3LL Documents
Download datasheets and manufacturer documentation for STP160N3LL
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Shipping Rate
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