STMicroelectronics_STB120N4LF6
original

STMicroelectronics
STB120N4LF6

278-STB120N4LF6
PDF Datasheet
N-Ch 40V 80A 4mR D2PAK Power MOSFET
39 Weeks

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Tech Specifications

Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
4mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
4MR
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
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STB120N4LF6 Description

STB120N4LF6 Description

The STB120N4LF6 is a high-performance N-channel MOSFET designed and manufactured by STMicroelectronics. This device is part of the DeepGATE™, STripFET™ VI series and is specifically tailored for automotive applications. It offers a unique combination of high current handling, low on-resistance, and excellent switching performance, making it an ideal choice for various power management and motor control applications.

STB120N4LF6 Features

  • High Current Handling: The STB120N4LF6 can handle continuous drain currents up to 80A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum on-resistance (Rds(on)) of 4mΩ at 40A and 10V, this MOSFET provides efficient power delivery with minimal power loss.
  • Fast Switching: The device has a low gate charge (Qg) of 80nC at 10V, enabling fast switching and reducing switching losses.
  • Robust Voltage Ratings: It features a drain-to-source voltage (Vdss) of 40V and a maximum gate-source voltage (Vgs) of ±20V, ensuring reliable operation in demanding environments.
  • Automotive Grade: The STB120N4LF6 is designed to meet the stringent requirements of automotive applications, with a moisture sensitivity level (MSL) of 1 and compliance with the REACH regulation.
  • Surface Mount Package: The device is available in a D2PAK package, which is suitable for surface-mount applications, providing a compact and efficient solution for space-constrained designs.

STB120N4LF6 Applications

The STB120N4LF6 is ideal for various automotive and industrial applications, including:

  • Motor Control: Due to its high current handling and low on-resistance, this MOSFET is well-suited for electric motor control in electric vehicles (EVs) and hybrid electric vehicles (HEVs).
  • Power Management: The device can be used in power management systems for battery charging, energy storage, and power conversion in automotive and industrial applications.
  • Inverters: The STB120N4LF6 can be employed in inverter designs for solar power systems and other renewable energy applications.
  • Industrial Automation: This MOSFET is also suitable for industrial automation systems, such as robotics and automation control, where high power and fast switching are required.

Conclusion of STB120N4LF6

The STB120N4LF6 is a versatile and high-performance N-channel MOSFET that offers excellent current handling, low on-resistance, and fast switching capabilities. Its automotive-grade design and robust voltage ratings make it an ideal choice for a wide range of applications, including motor control, power management, inverters, and industrial automation. With its unique features and advantages over similar models, the STB120N4LF6 is a reliable and efficient solution for demanding power electronic applications.

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The standard lead time for STB120N4LF6 is 39 Weeks.
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