STMicroelectronics_STB120N4LF6

STMicroelectronics
STB120N4LF6  
Single FETs, MOSFETs

STMicroelectronics
STB120N4LF6
278-STB120N4LF6
Ersa
STMicroelectronics-STB120N4LF6-datasheets-9082109.pdf
MOSFET N-CH 40V 80A D2PAK
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STB120N4LF6 Description

STB120N4LF6 Description

The STB120N4LF6 is a high-performance N-channel MOSFET designed and manufactured by STMicroelectronics. This device is part of the DeepGATE™, STripFET™ VI series and is specifically tailored for automotive applications. It offers a unique combination of high current handling, low on-resistance, and excellent switching performance, making it an ideal choice for various power management and motor control applications.

STB120N4LF6 Features

  • High Current Handling: The STB120N4LF6 can handle continuous drain currents up to 80A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum on-resistance (Rds(on)) of 4mΩ at 40A and 10V, this MOSFET provides efficient power delivery with minimal power loss.
  • Fast Switching: The device has a low gate charge (Qg) of 80nC at 10V, enabling fast switching and reducing switching losses.
  • Robust Voltage Ratings: It features a drain-to-source voltage (Vdss) of 40V and a maximum gate-source voltage (Vgs) of ±20V, ensuring reliable operation in demanding environments.
  • Automotive Grade: The STB120N4LF6 is designed to meet the stringent requirements of automotive applications, with a moisture sensitivity level (MSL) of 1 and compliance with the REACH regulation.
  • Surface Mount Package: The device is available in a D2PAK package, which is suitable for surface-mount applications, providing a compact and efficient solution for space-constrained designs.

STB120N4LF6 Applications

The STB120N4LF6 is ideal for various automotive and industrial applications, including:

  • Motor Control: Due to its high current handling and low on-resistance, this MOSFET is well-suited for electric motor control in electric vehicles (EVs) and hybrid electric vehicles (HEVs).
  • Power Management: The device can be used in power management systems for battery charging, energy storage, and power conversion in automotive and industrial applications.
  • Inverters: The STB120N4LF6 can be employed in inverter designs for solar power systems and other renewable energy applications.
  • Industrial Automation: This MOSFET is also suitable for industrial automation systems, such as robotics and automation control, where high power and fast switching are required.

Conclusion of STB120N4LF6

The STB120N4LF6 is a versatile and high-performance N-channel MOSFET that offers excellent current handling, low on-resistance, and fast switching capabilities. Its automotive-grade design and robust voltage ratings make it an ideal choice for a wide range of applications, including motor control, power management, inverters, and industrial automation. With its unique features and advantages over similar models, the STB120N4LF6 is a reliable and efficient solution for demanding power electronic applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB120N4LF6 Documents

Download datasheets and manufacturer documentation for STB120N4LF6

Ersa STx120N4LF6      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB120N4LF6 View All Specifications      
Ersa STx120N4LF6      
Ersa D2PAK Lead Modification 04/Oct/2013      

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