STMicroelectronics_STH360N4F6-2
original

STMicroelectronics
STH360N4F6-2

278-STH360N4F6-2
PDF Datasheet
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package

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Tech Specifications

Package/Case
TO-263-3
Continuous Drain Current (ID)
180A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
1.25mR
Drain to Source Voltage (Vdss)
40V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
17.93nF
Max Operating Temperature
175°C
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STH360N4F6-2 Description

N-Channel 40 V 180A (Tc) 300W (Tc) Surface Mount H2PAK-2

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