STMicroelectronics_STB120N4F6
original

STMicroelectronics
STB120N4F6

278-STB120N4F6
PDF Datasheet
N-CH MOSFET, 40V, 80A, 4mR, D2PAK, Surface Mount
39 Weeks

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Tech Specifications

Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
4mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
4MR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
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STB120N4F6 Description

STB120N4F6 Description

The STB120N4F6 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for automotive applications. With a drain-to-source voltage of 40V and a continuous drain current of 80A at 25°C, this device offers excellent electrical performance. The STB120N4F6 features a DeepGATE™ and STripFET™ VI series, which provide low on-resistance and high efficiency. The device is mounted on a surface mount package, making it suitable for compact designs.

STB120N4F6 Features

  • Low On-Resistance: The STB120N4F6 has a maximum on-resistance (Rds(on)) of 4mΩ at 40A and 10V, ensuring low power dissipation and high efficiency.
  • High Input Capacitance: With a maximum input capacitance (Ciss) of 3850pF at 25V, this MOSFET provides fast switching capabilities.
  • Low Gate Charge: The maximum gate charge (Qg) is 65nC at 10V, reducing switching losses and improving efficiency.
  • Robust Voltage Ratings: The device can handle a maximum gate-source voltage (Vgs) of ±20V and a drain-to-source voltage (Vdss) of 40V.
  • Automotive Grade: The STB120N4F6 is designed for automotive applications, with a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering.
  • RoHS Compliant: This MOSFET is compliant with the RoHS3 directive, making it suitable for environmentally friendly designs.

STB120N4F6 Applications

The STB120N4F6 is ideal for various automotive applications, including:

  • Battery Management Systems: The high current and voltage ratings make it suitable for managing battery charging and discharging.
  • DC-DC Converters: The low on-resistance and high efficiency of this MOSFET make it an excellent choice for power conversion in automotive systems.
  • Motor Control: The STB120N4F6 can be used in electric vehicle motor control applications, providing precise control and high efficiency.
  • Power Distribution: This MOSFET can be used in power distribution systems within vehicles, ensuring reliable power delivery to various components.

Conclusion of STB120N4F6

The STB120N4F6 is a high-performance, automotive-grade N-Channel MOSFET from STMicroelectronics. Its low on-resistance, high input capacitance, and robust voltage ratings make it an ideal choice for various automotive applications, including battery management systems, DC-DC converters, motor control, and power distribution. With its RoHS compliance and unlimited storage time before reflow soldering, the STB120N4F6 offers a reliable and environmentally friendly solution for demanding automotive applications.

FAQ

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The standard lead time for STB120N4F6 is 39 Weeks.
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Availability (In Stock : 11 )
Quantity Unit Price Ext. Price
1+ $2.97772 $2.98
10+ $2.90915 $29.09
30+ $2.86457 $85.94
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