STMicroelectronics_STB120N4F6

STMicroelectronics
STB120N4F6  
Single FETs, MOSFETs

STMicroelectronics
STB120N4F6
278-STB120N4F6
Ersa
STMicroelectronics-STB120N4F6-datasheets-9762171.pdf
MOSFET N-CH 40V 80A D2PAK
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STB120N4F6 Description

STB120N4F6 Description

The STB120N4F6 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for automotive applications. With a drain-to-source voltage of 40V and a continuous drain current of 80A at 25°C, this device offers excellent electrical performance. The STB120N4F6 features a DeepGATE™ and STripFET™ VI series, which provide low on-resistance and high efficiency. The device is mounted on a surface mount package, making it suitable for compact designs.

STB120N4F6 Features

  • Low On-Resistance: The STB120N4F6 has a maximum on-resistance (Rds(on)) of 4mΩ at 40A and 10V, ensuring low power dissipation and high efficiency.
  • High Input Capacitance: With a maximum input capacitance (Ciss) of 3850pF at 25V, this MOSFET provides fast switching capabilities.
  • Low Gate Charge: The maximum gate charge (Qg) is 65nC at 10V, reducing switching losses and improving efficiency.
  • Robust Voltage Ratings: The device can handle a maximum gate-source voltage (Vgs) of ±20V and a drain-to-source voltage (Vdss) of 40V.
  • Automotive Grade: The STB120N4F6 is designed for automotive applications, with a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering.
  • RoHS Compliant: This MOSFET is compliant with the RoHS3 directive, making it suitable for environmentally friendly designs.

STB120N4F6 Applications

The STB120N4F6 is ideal for various automotive applications, including:

  • Battery Management Systems: The high current and voltage ratings make it suitable for managing battery charging and discharging.
  • DC-DC Converters: The low on-resistance and high efficiency of this MOSFET make it an excellent choice for power conversion in automotive systems.
  • Motor Control: The STB120N4F6 can be used in electric vehicle motor control applications, providing precise control and high efficiency.
  • Power Distribution: This MOSFET can be used in power distribution systems within vehicles, ensuring reliable power delivery to various components.

Conclusion of STB120N4F6

The STB120N4F6 is a high-performance, automotive-grade N-Channel MOSFET from STMicroelectronics. Its low on-resistance, high input capacitance, and robust voltage ratings make it an ideal choice for various automotive applications, including battery management systems, DC-DC converters, motor control, and power distribution. With its RoHS compliance and unlimited storage time before reflow soldering, the STB120N4F6 offers a reliable and environmentally friendly solution for demanding automotive applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB120N4F6 Documents

Download datasheets and manufacturer documentation for STB120N4F6

Ersa Mult Devices Testing 10/May/2018      
Ersa STx120N4F6      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa STB120N4F6 View All Specifications      
Ersa STx120N4F6      
Ersa D2PAK Lead Modification 04/Oct/2013      

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