STMicroelectronics_STW36NM60ND

STMicroelectronics
STW36NM60ND  
Single FETs, MOSFETs

STMicroelectronics
STW36NM60ND
278-STW36NM60ND
Ersa
STMicroelectronics-STW36NM60ND-datasheets-11388535.pdf
MOSFET N-CH 600V 29A TO247
In Stock : 1516

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STW36NM60ND Description

STW36NM60ND Description

The STW36NM60ND is a high-performance N-Channel MOSFET from STMicroelectronics, designed for use in a variety of applications requiring robust power handling and efficient switching. This device is part of the FDmesh™ II series and is packaged in a TO247 package, making it suitable for a wide range of power electronic applications.

STW36NM60ND Features

  • Technology: MOSFET (Metal Oxide), offering high efficiency and low power loss.
  • Drain to Source Voltage (Vdss): 600V, suitable for high-voltage applications.
  • Current - Continuous Drain (Id): 29A at 25°C, providing substantial current handling capability.
  • Rds On (Max): 110mOhm at 14.5A, 10V, ensuring low on-resistance for efficient power delivery.
  • Gate Charge (Qg): 80.4 nC at 10V, contributing to fast switching speeds.
  • Input Capacitance (Ciss): 2785 pF at 50V, minimizing capacitive loading on the gate drive.
  • Operating Temperature: 150°C (TJ), suitable for high-temperature environments.
  • Mounting Type: Through Hole, allowing for easy integration into existing designs.
  • Grade: Automotive, indicating its suitability for use in automotive applications.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.
  • RoHS Status: ROHS3 Compliant, adhering to environmental standards.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating low sensitivity to moisture, which is beneficial for long-term reliability.

STW36NM60ND Applications

The STW36NM60ND is ideal for applications that demand high voltage and current handling capabilities, such as:

  • Automotive Electronics: Power windows, lighting systems, and engine control units.
  • Industrial Control Systems: Motor drives, power supplies, and solar inverters.
  • Power Supplies: Switching power supplies and uninterruptible power supplies (UPS).
  • Renewable Energy: Solar panel inverters and wind turbine control systems.

Conclusion of STW36NM60ND

The STW36NM60ND stands out for its high voltage and current ratings, low on-resistance, and fast switching capabilities, making it a versatile choice for demanding power electronic applications. Its automotive grade and compliance with environmental regulations further enhance its appeal for use in a wide range of industries. Despite being classified as obsolete, its unique features and performance benefits make it a valuable option for legacy systems or specialized applications where such specifications are required.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STW36NM60ND Documents

Download datasheets and manufacturer documentation for STW36NM60ND

Ersa Mult Devices Testing 10/May/2018      
Ersa ST(B,W)36NM60ND      
Ersa STx36NM60ND obs 26/May/2023      
Ersa ST(B,W)36NM60ND      

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