STMicroelectronics_STP3N80K5

STMicroelectronics
STP3N80K5  
Single FETs, MOSFETs

STMicroelectronics
STP3N80K5
278-STP3N80K5
Ersa
STMicroelectronics-STP3N80K5-datasheets-4278194.pdf
MOSFET N-CH 800V 2.5A TO220
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STP3N80K5 Description

STP3N80K5 Description

The STP3N80K5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 2.5A at 25°C, this N-Channel device is suitable for various high-voltage applications. The STP3N80K5 is part of the SuperMESH5™ series, known for its excellent performance and reliability.

STP3N80K5 Features

  • High Voltage Tolerance: The STP3N80K5 can handle drain-to-source voltages up to 800V, making it ideal for high-voltage applications.
  • Low On-Resistance: With a maximum on-resistance (Rds On) of 3.5Ω at 1A and 10V, the STP3N80K5 offers efficient power dissipation and reduced power loss.
  • Low Gate Charge: A maximum gate charge (Qg) of 9.5nC at 10V ensures fast switching and reduced power consumption.
  • Robust Power Dissipation: Capable of dissipating up to 60W of power, the STP3N80K5 is suitable for demanding applications.
  • Wide Operating Voltage Range: The device can operate with a gate-source voltage (Vgs) ranging from -30V to +30V, providing flexibility in various circuit designs.
  • Compliance with Regulations: The STP3N80K5 is compliant with the RoHS3 directive and is unaffected by REACH regulations, ensuring environmental and safety standards are met.

STP3N80K5 Applications

The STP3N80K5 is ideal for applications that require high voltage and power handling capabilities, such as:

  • Power Supplies: Due to its high voltage and current ratings, the STP3N80K5 is suitable for power supply designs, particularly in industrial and automotive applications.
  • Motor Controls: The device's high voltage and low on-resistance make it an excellent choice for motor control applications, providing efficient power switching and reduced losses.
  • Industrial Automation: The STP3N80K5's robust performance and compliance with safety standards make it suitable for industrial automation systems, where reliability and efficiency are critical.

Conclusion of STP3N80K5

The STP3N80K5 is a high-performance MOSFET from STMicroelectronics, offering excellent voltage and current handling capabilities. Its low on-resistance, fast switching, and compliance with environmental regulations make it an ideal choice for high-voltage applications such as power supplies, motor controls, and industrial automation. While it is not recommended for new designs, the STP3N80K5 remains a reliable option for existing applications requiring its specific performance characteristics.

Tech Specifications

Configuration
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP3N80K5 Documents

Download datasheets and manufacturer documentation for STP3N80K5

Ersa IPD/15/9124 20/Mar/2015      
Ersa STx3N80K5      
Ersa STx3N80K5      

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