STMicroelectronics_STB30NF10T4

STMicroelectronics
STB30NF10T4  
Single FETs, MOSFETs

STMicroelectronics
STB30NF10T4
278-STB30NF10T4
MOSFET N-CH 100V 35A D2PAK
In Stock : 1818

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STB30NF10T4 Description

STB30NF10T4 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in high voltage applications, such as power electronics, motor control, and switching regulators.

Description:

The STB30NF10T4 is an N-channel enhancement mode field effect transistor (FET) with a voltage rating of 1000V and a continuous drain current of 2.3A. It features a low on-state resistance (RDS(on)) of 0.65 ohms maximum at a gate-source voltage (VGS) of 10V, making it suitable for use in high efficiency power conversion applications.

Features:

  • High voltage rating of 1000V
  • Continuous drain current of 2.3A
  • Low on-state resistance (RDS(on)) of 0.65 ohms maximum at VGS = 10V
  • Enhancement mode operation
  • Suitable for use in high efficiency power conversion applications

Applications:

  • Power electronics
  • Motor control
  • Switching regulators
  • High voltage switching applications
  • Industrial control systems
  • Automotive electronics

In summary, the STB30NF10T4 is a high voltage N-channel MOSFET transistor that offers high efficiency and low on-state resistance, making it suitable for use in a variety of high voltage applications. Its features and performance make it a popular choice for power electronics, motor control, and switching regulator applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB30NF10T4 Documents

Download datasheets and manufacturer documentation for STB30NF10T4

Ersa Mult Dev Assembly Chg 18/Oct/2019      
Ersa ST(B,P)30NF10(FP)      
Ersa Box Label Chg 28/Jul/2016      
Ersa STB30NF10 View All Specifications      
Ersa ST(B,P)30NF10(FP)      
Ersa IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013      

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