STMicroelectronics_STF12N65M2

STMicroelectronics
STF12N65M2  
Single FETs, MOSFETs

STMicroelectronics
STF12N65M2
278-STF12N65M2
Ersa
STMicroelectronics-STF12N65M2-datasheets-12724736.pdf
MOSFET N-CH 650V 8A TO220FP
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STF12N65M2 Description

STF12N65M2 Description

The STF12N65M2 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. This N-Channel MOSFET features a drain-to-source voltage (Vdss) of 650V, making it suitable for a wide range of power electronics applications. With a continuous drain current (Id) of 8A at 25°C and a maximum power dissipation of 25W, the STF12N65M2 delivers excellent performance in demanding environments.

STF12N65M2 Features

  • High Voltage and Current Handling: The STF12N65M2 can handle a drain-to-source voltage of up to 650V and a continuous drain current of 8A, making it ideal for high-power applications.
  • Low On-Resistance: With an Rds(on) of only 500mOhm at 4A and 10V, the STF12N65M2 offers low power losses and high efficiency in switching applications.
  • Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation and compatibility with various gate drive circuits.
  • Low Gate Charge: The STF12N65M2 features a low gate charge (Qg) of 16.5nC at 10V, reducing switching losses and improving efficiency.
  • Environmental Compliance: The device is compliant with the RoHS3 standard, making it suitable for environmentally conscious applications.
  • Moisture Sensitivity Level (MSL) 1: The STF12N65M2 has an MSL of 1, indicating unlimited storage time before reflow soldering, reducing handling and storage concerns.

STF12N65M2 Applications

The STF12N65M2 is ideal for a variety of high-power applications, including:

  • Power Supplies: The high voltage and current ratings make it suitable for power supply designs, such as switching power supplies and battery chargers.
  • Industrial Control: The device's robust performance and environmental compliance make it suitable for industrial control applications, such as motor drives and inverters.
  • Automotive Electronics: The STF12N65M2 can be used in automotive applications, such as electric vehicle charging systems and power management circuits.
  • Renewable Energy Systems: The high voltage and current ratings make it suitable for renewable energy systems, such as solar inverters and wind power converters.

Conclusion of STF12N65M2

The STF12N65M2 from STMicroelectronics is a high-performance N-Channel MOSFET that offers excellent voltage and current handling capabilities, low on-resistance, and robust gate drive. Its environmental compliance and moisture sensitivity level make it suitable for a wide range of applications, including power supplies, industrial control, automotive electronics, and renewable energy systems. With its unique features and advantages, the STF12N65M2 is an ideal choice for demanding high-power applications where performance and reliability are critical.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF12N65M2 Documents

Download datasheets and manufacturer documentation for STF12N65M2

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