STMicroelectronics_STU12N65M5
original

STMicroelectronics
STU12N65M5

278-STU12N65M5
PDF Datasheet
650V 8.5A N-CH Power MOSFET TO-251

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Tech Specifications

Package/Case
TO-251
Continuous Drain Current (ID)
8.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
430mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
430MR
Fall Time
15.6ns
Gate to Source Voltage (Vgs)
25V
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STU12N65M5 Description

N-Channel 650 V 8.5A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

FAQ

What is the mounting type of STU12N65M5?
STU12N65M5 uses a Through Hole mounting style based on the listed product specifications.
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