STMicroelectronics_STP34N65M5

STMicroelectronics
STP34N65M5  
Single FETs, MOSFETs

STMicroelectronics
STP34N65M5
278-STP34N65M5
Ersa
STMicroelectronics-STP34N65M5-datasheets-4180197.pdf
MOSFET N-CH 650V 28A TO220
In Stock : 1504

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STP34N65M5 Description

STP34N65M5 Description

The STP34N65M5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for various electronic applications requiring robust power management. This N-Channel MOSFET features a drain-to-source voltage (Vdss) of 650V, making it suitable for high-voltage applications. With a continuous drain current (Id) of 28A at 25°C, the STP34N65M5 provides efficient power handling capabilities. The device is mounted through-hole and is packaged in a tube, ensuring easy integration into various systems.

STP34N65M5 Features

  • High Voltage Tolerance: The STP34N65M5 can withstand a drain-to-source voltage of up to 650V, making it ideal for high-voltage applications.
  • Efficient Power Handling: With a continuous drain current of 28A at 25°C, this MOSFET efficiently manages power in various electronic systems.
  • Low On-Resistance: The STP34N65M5 has a maximum on-resistance (Rds On) of 110mOhm at 14A and 10V, ensuring minimal power loss during operation.
  • Fast Switching Speed: The device has a maximum gate threshold voltage (Vgs(th)) of 5V at 250µA, enabling fast switching and reducing power consumption.
  • Robust Construction: The STP34N65M5 is designed to dissipate up to 190W of power, making it suitable for high-power applications.
  • Environmental Compliance: This MOSFET is compliant with the RoHS3 directive, ensuring environmentally friendly operation.

STP34N65M5 Applications

The STP34N65M5 is ideal for various applications where high voltage and efficient power management are required. Some specific use cases include:

  1. Power Supplies: The high voltage tolerance and efficient power handling make the STP34N65M5 suitable for power supply designs, including switching power supplies and power management systems.
  2. Industrial Automation: This MOSFET can be used in motor control applications, providing efficient power management and precise control in industrial automation systems.
  3. Automotive Electronics: The STP34N65M5 can be integrated into automotive electronics, such as electric power steering systems and battery management systems, due to its high voltage tolerance and robust construction.

Conclusion of STP34N65M5

The STP34N65M5 is a high-performance MOSFET from STMicroelectronics, offering a combination of high voltage tolerance, efficient power handling, and fast switching capabilities. Its robust construction and environmental compliance make it an ideal choice for various high-voltage applications, including power supplies, industrial automation, and automotive electronics. With its unique features and advantages over similar models, the STP34N65M5 is a reliable and efficient solution for demanding electronic systems.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP34N65M5 Documents

Download datasheets and manufacturer documentation for STP34N65M5

Ersa STB,I,P,W34N65M5      
Ersa Box Label Chg 28/Jul/2016      
Ersa STP34N65M5 View All Specifications      
Ersa STB,I,P,W34N65M5      

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