STMicroelectronics

SCTWA90N65G2V-4  

Single FETs, MOSFETs

STMicroelectronics' SCTWA90N65G2V-4 is a high-power, high-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a variety of applications, including power electronics and industrial control systems.

Description:

The SCTWA90N65G2V-4 is an N-channel enhancement mode MOSFET with a breakdown voltage (V(BR)) of 650V. It is manufactured using ST's advanced Trench-Cell Technology, which provides high performance and reliability in a compact package.

Features:

1. High breakdown voltage (V(BR)) of 650V
2. Low on-state resistance (RDS(on)) of 0.45 ohms (maximum) at a gate-source voltage (V(GS)) of 10V
3. High input impedance
4. Fast switching speed
5. Low gate charge
6. Low internal capacitance
7. Avalanche energy rating of 200mJ

Applications:

The SCTWA90N65G2V-4 is suitable for use in a wide range of applications, including:

1. Power electronics, such as power supplies, motor drives, and inverters
2. Industrial control systems, such as motor controllers and welding equipment
3. Automotive applications, such as electric vehicle charging systems and power steering systems
4. Renewable energy systems, such as solar panel inverters and wind turbine converters
5. Battery management systems for electric vehicles and energy storage systems

Overall, the SCTWA90N65G2V-4 is a high-performance MOSFET that offers excellent electrical characteristics and reliability, making it an ideal choice for a wide range of power electronic and industrial applications.

SCTWA90N65G2V-4 Documents

Download datasheets and manufacturer documentation for SCTWA90N65G2V-4

Datasheets :

SCTWA90N65G2V-4