STMicroelectronics

STW10N95K5

STW10N95K5 is a high-frequency, high-power gallium nitride (GaN) transistor offered by STMicroelectronics. It is designed for use in high-power applications such as power amplifiers, power converters, and motor drives.

Description:

The STW10N95K5 is a GaN-on-Si transistor with a breakdown voltage of 650V and a continuous drain current of 10A. It is offered in a TO-247AC package.

Features:

• High-frequency operation up to 1.5 GHz
• High-power capability with low gate charge and low output capacitance
• High breakdown voltage of 650V
• Low on-resistance of 0.07 ohms maximum
• High efficiency and fast switching speeds
• Low thermal resistance and improved thermal performance
• Integrated miller plateau control for improved stability

Applications:

The STW10N95K5 is suitable for a wide range of high-power applications, including:

1. Power amplifiers for wireless communication systems
2. Power converters for renewable energy systems, such as solar panels and wind turbines
3. Motor drives for industrial automation and electric vehicles
4. Power supplies for high-power computing and data center applications
5. High-voltage power electronics for electric grid applications

In summary, the STW10N95K5 is a high-performance GaN transistor that offers high-frequency operation, high-power capability, and low on-resistance. It is suitable for a wide range of high-power applications, including power amplifiers, power converters, and motor drives.