STMicroelectronics
STW10N95K5
Single FETs, MOSFETs
STW10N95K5
278-STW10N95K5
STMicroelectronics-STW10N95K5-datasheets-3747694.pdf
MOSFET N-CH 950V 8A TO247
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STW10N95K5 Description
STW10N95K5 is a high-frequency, high-power gallium nitride (GaN) transistor offered by STMicroelectronics. It is designed for use in high-power applications such as power amplifiers, power converters, and motor drives.
Description:
The STW10N95K5 is a GaN-on-Si transistor with a breakdown voltage of 650V and a continuous drain current of 10A. It is offered in a TO-247AC package.
Features:
- High-frequency operation up to 1.5 GHz
- High-power capability with low gate charge and low output capacitance
- High breakdown voltage of 650V
- Low on-resistance of 0.07 ohms maximum
- High efficiency and fast switching speeds
- Low thermal resistance and improved thermal performance
- Integrated miller plateau control for improved stability
Applications:
The STW10N95K5 is suitable for a wide range of high-power applications, including:
- Power amplifiers for wireless communication systems
- Power converters for renewable energy systems, such as solar panels and wind turbines
- Motor drives for industrial automation and electric vehicles
- Power supplies for high-power computing and data center applications
- High-voltage power electronics for electric grid applications
In summary, the STW10N95K5 is a high-performance GaN transistor that offers high-frequency operation, high-power capability, and low on-resistance. It is suitable for a wide range of high-power applications, including power amplifiers, power converters, and motor drives.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STW10N95K5 Documents
Download datasheets and manufacturer documentation for STW10N95K5
IPD/15/9124 20/Mar/2015 ST(B,F,P,W)10N95K5 Standard outer labelling 15/Nov/2023 ST(B,F,P,W)10N95K5 Related Parts
Shopping Guide
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