STMicroelectronics_STD2NK60Z-1
original

STMicroelectronics
STD2NK60Z-1

278-STD2NK60Z-1
600V 1.4A N-CH MOSFET, 8R RdsOn, TO-251 Power Transistor

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Tech Specifications

Package/Case
TO-251-3
Continuous Drain Current (ID)
1.4A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
600V
Fall Time
25ns
Gate to Source Voltage (Vgs)
30V
Height
6.2mm
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STD2NK60Z-1 Description

N-Channel 600 V 1.4A (Tc) 45W (Tc) Through Hole IPAK

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