STMicroelectronics_STN2NF10

STMicroelectronics
STN2NF10  
Single FETs, MOSFETs

STMicroelectronics
STN2NF10
278-STN2NF10
MOSFET N-CH 100V 2.4A SOT-223
In Stock : 29267

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    STN2NF10 Description

    STN2NF10 Description

    The STN2NF10 is a MOSFET N-CH 100V 2.4A SOT-223 device manufactured by STMicroelectronics. This single FET is part of the STripFET™ II series and is designed for high-performance applications. With a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 2.4A at 25°C, the STN2NF10 offers excellent electrical performance. It features a low on-resistance (Rds On) of 260mOhm at 1.2A and 10V, ensuring efficient power dissipation with a maximum power dissipation of 3.3W at the case temperature (Tc).

    STN2NF10 Features

    • Technology: MOSFET (Metal Oxide)
    • Input Capacitance (Ciss): Maximum 280 pF at 25V
    • Gate Charge (Qg): Maximum 14 nC at 10V
    • Vgs (Max): ±20V
    • Vgs(th) (Max): 4V at 250µA
    • Rds On (Max): 260mOhm at 1.2A and 10V
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id): 2.4A at 25°C
    • Power Dissipation (Max): 3.3W (Tc)
    • Mounting Type: Surface Mount
    • Package: Tape & Reel (TR)
    • REACH Status: REACH Unaffected
    • RoHS Status: ROHS3 Compliant
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • ECCN: EAR99
    • HTSUS: 8541.29.0095

    STN2NF10 Applications

    The STN2NF10 is ideal for various applications due to its high voltage and current ratings, low on-resistance, and excellent electrical performance. Some specific use cases include:

    1. Power Management: The STN2NF10 can be used in power management circuits, such as voltage regulators and converters, where high voltage and current ratings are required.
    2. Motor Control: This MOSFET is suitable for motor control applications, such as brushless DC motors and stepper motors, due to its ability to handle high voltage and current.
    3. Industrial Automation: The STN2NF10 can be used in industrial automation systems, such as robotic arms and conveyor belts, where high power and efficient power dissipation are essential.
    4. Automotive Applications: This MOSFET is suitable for automotive applications, such as electric vehicle chargers and power windows, where high voltage and current ratings are necessary.

    Conclusion of STN2NF10

    The STN2NF10 is a high-performance MOSFET N-CH 100V 2.4A SOT-223 device from STMicroelectronics. It offers excellent electrical performance, low on-resistance, and efficient power dissipation, making it ideal for various applications, including power management, motor control, industrial automation, and automotive systems. With its unique features and advantages over similar models, the STN2NF10 is a reliable choice for demanding applications in the electronics industry.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STN2NF10 Documents

    Download datasheets and manufacturer documentation for STN2NF10

    Ersa Carrier/Cover Tape Supplier 23/Sep/2021      
    Ersa STN2NF10      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STN2NF10 View All Specifications      
    Ersa STN2NF10      

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