STMicroelectronics

STP34NM60ND  

Single FETs, MOSFETs

STP34NM60ND Description

The STP34NM60ND is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 29A at 25°C, this MOSFET is well-suited for various power electronics applications.

STP34NM60ND Features

• High Voltage and Current Handling: The STP34NM60ND can handle a drain-to-source voltage of up to 600V and a continuous drain current of 29A at 25°C, making it ideal for high-power applications.
• Low On-Resistance: With a maximum Rds(on) of 110mOhm at 14.5A and 10V, the STP34NM60ND offers low on-resistance, resulting in minimal power dissipation and improved efficiency.
• Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation across a wide range of gate drive conditions.
• Thermal Performance: The STP34NM60ND can dissipate up to 190W of power (Tc), making it suitable for high-power applications where thermal management is critical.
• Environmental Compliance: The device is compliant with RoHS3 and REACH regulations, ensuring environmental safety and compliance with international standards.

STP34NM60ND Applications

The STP34NM60ND is ideal for a variety of applications where high voltage and current handling are required, including:

• Power Supplies: The high voltage and current ratings make it suitable for use in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
• Industrial Control: The STP34NM60ND can be used in motor control applications, such as electric vehicle (EV) motor drives and industrial automation systems.
• Renewable Energy: The device is well-suited for use in solar inverters and wind turbine power conversion systems, where high voltage and current handling are essential.

Conclusion of STP34NM60ND

The STP34NM60ND from STMicroelectronics is a versatile and high-performance N-channel MOSFET, offering a combination of high voltage and current handling capabilities, low on-resistance, and robust gate drive. Its compliance with environmental regulations and suitability for a wide range of applications make it an excellent choice for power electronics designers looking to optimize efficiency and performance in their designs.

STP34NM60ND Documents

Download datasheets and manufacturer documentation for STP34NM60ND

Datasheets :

STx34NM60ND