STMicroelectronics_STB42N65M5

STMicroelectronics
STB42N65M5  
Single FETs, MOSFETs

STMicroelectronics
STB42N65M5
278-STB42N65M5
Ersa
STMicroelectronics-STB42N65M5-datasheets-1110660.pdf
MOSFET N-CH 650V 33A D2PAK
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STB42N65M5 Description

STB42N65M5 Description

The STB42N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. With a 650V drain-to-source voltage (Vdss) and 33A continuous drain current (Id), it delivers robust performance in high-voltage circuits. The device leverages MDmesh™ V technology, optimizing switching efficiency and reducing conduction losses. Packaged in a D2PAK (TO-263) surface-mount format, it is suitable for automated assembly processes and offers excellent thermal management. Its low on-resistance (Rds(on)) of 79mΩ at 10V Vgs ensures minimal power dissipation, making it ideal for energy-efficient designs.

STB42N65M5 Features

  • High Voltage & Current Rating: 650V Vdss and 33A Id (at 25°C) for robust power handling.
  • Low Rds(on): 79mΩ @ 10V Vgs, enhancing efficiency in high-current applications.
  • Advanced MDmesh™ V Technology: Reduces switching losses and improves thermal performance.
  • High Drive Capability: Gate charge (Qg) of 100nC @ 10V ensures fast switching.
  • Wide Vgs Range: ±25V maximum gate-source voltage for flexible drive circuitry.
  • Thermal Resilience: 190W power dissipation (Tc) and 150°C junction temperature (TJ) rating.
  • Reliable Packaging: D2PAK (TO-263) with RoHS3 compliance and MSL1 (unlimited) moisture sensitivity.

STB42N65M5 Applications

This MOSFET excels in high-efficiency power conversion systems, including:

  • Switched-Mode Power Supplies (SMPS): Particularly in PFC (Power Factor Correction) stages.
  • Motor Drives & Inverters: For industrial and automotive applications requiring high voltage tolerance.
  • Renewable Energy Systems: Solar inverters and wind power converters benefit from its low-loss switching.
  • LED Lighting Drivers: High efficiency and thermal stability make it suitable for high-power LED systems.
  • DC-DC Converters: Where low Rds(on) and fast switching are critical for performance.

Conclusion of STB42N65M5

The STB42N65M5 stands out as a high-reliability MOSFET for 650V power applications, combining low conduction losses, fast switching, and excellent thermal performance. Its MDmesh™ V technology and D2PAK packaging make it a superior choice for designers prioritizing efficiency, power density, and durability. Whether in industrial motor drives, renewable energy systems, or high-efficiency SMPS, this MOSFET delivers consistent performance under demanding conditions.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB42N65M5 Documents

Download datasheets and manufacturer documentation for STB42N65M5

Ersa Product Change Notification 2024-03-05 (PDF)       D2PAK Leads (Pins) Modification (PDF)       Product Change Notification (PDF)      

Shopping Guide

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