STMicroelectronics_STL115N10F7AG

STMicroelectronics
STL115N10F7AG  
Single FETs, MOSFETs

STMicroelectronics
STL115N10F7AG
278-STL115N10F7AG
Ersa
STMicroelectronics-STL115N10F7AG-datasheets-10093846.pdf
MOSFET N-CH 100V 107A POWERFLAT
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STL115N10F7AG Description

STL115N10F7AG Description

The STL115N10F7AG from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power management applications. Built using advanced STripFET™ F7 technology, it offers an optimal balance of low on-resistance (6mΩ @ 53A, 10V) and high current handling (107A continuous drain current @ 25°C). With a 100V drain-to-source voltage (Vdss) rating and a robust 136W power dissipation (Tc), this MOSFET is engineered for efficiency and reliability in high-power circuits. Its PowerFlat™ (5x6) surface-mount package with wettable flanks ensures superior thermal performance and solder joint inspection compatibility, making it ideal for automated assembly processes.

STL115N10F7AG Features

  • Low Rds(On): 6mΩ @ 53A, 10V minimizes conduction losses.
  • High Current Capability: 107A continuous drain current supports high-load applications.
  • Fast Switching: Optimized gate charge (72.5nC @ 10V) and input capacitance (5600pF @ 50V) enhance switching efficiency.
  • Automotive Grade: Compliant with stringent automotive reliability standards.
  • Robust Protection: ±20V gate-source voltage (Vgs) tolerance for enhanced durability.
  • Surface-Mount Design: PowerFlat™ package with wettable flanks improves thermal dissipation and manufacturability.

STL115N10F7AG Applications

This MOSFET excels in high-efficiency power systems, including:

  • Automotive Systems: Motor drives, LED lighting, and DC-DC converters.
  • Industrial Power Supplies: High-current switching regulators and inverters.
  • Telecom Infrastructure: Base station power amplifiers and server PSUs.
  • Renewable Energy: Solar inverters and battery management systems (BMS).
    Its low Rds(On) and high thermal performance make it particularly suitable for space-constrained, high-reliability applications.

Conclusion of STL115N10F7AG

The STL115N10F7AG stands out as a superior choice for engineers seeking a high-efficiency, high-current MOSFET with automotive-grade reliability. Its combination of low on-resistance, fast switching, and robust packaging ensures optimal performance in demanding environments. Whether for automotive, industrial, or renewable energy applications, this device delivers the power density and thermal management required for next-generation designs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STL115N10F7AG Documents

Download datasheets and manufacturer documentation for STL115N10F7AG

Ersa Mult Devices Testing 10/May/2018      
Ersa Spice Model Tutorial for Power MOSFETS       STL115N10F7AG Datasheet       ST-MOSFET-Finder Brief      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa Spice Model Tutorial for Power MOSFETS       STL115N10F7AG Datasheet       ST-MOSFET-Finder Brief      

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