STMicroelectronics
STL90N6F7
Single FETs, MOSFETs
STL90N6F7
278-STL90N6F7
STMicroelectronics-STL90N6F7-datasheets-11540510.pdf
MOSFET N-CH 60V 90A POWERFLAT
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STL90N6F7 Description
STMicroelectronics' STL90N6F7 is a high-performance, 60V, N-channel MOSFET designed for use in a wide range of applications, including motor control, power supplies, and battery management systems.
Description:
The STL90N6F7 is a surface-mount MOSFET with a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 90A. It features a low on-state resistance (RDS(on)) of 0.065 ohms (maximum) at a gate-source voltage (VGS) of 10V, which helps to minimize power dissipation and improve efficiency.
Features:
- High switching speed: The STL90N6F7 has a fast switching time, which makes it suitable for high-frequency applications.
- Low on-state resistance: The low RDS(on) helps to reduce power losses and improve overall system efficiency.
- High input impedance: The MOSFET has a high input impedance, which makes it easy to drive with a low-power control signal.
- Robust protection features: The device includes built-in protection features such as over-temperature protection and over-current protection to ensure reliable operation.
- Compact package: The MOSFET is available in a small, surface-mount package, which helps to save space on the printed circuit board (PCB).
Applications:
- Motor control: The STL90N6F7 is well-suited for use in brushless DC (BLDC) motor control applications, where high efficiency and fast switching speeds are required.
- Power supplies: The MOSFET can be used in power supply applications, such as switching power supplies and battery chargers, where high efficiency and low power dissipation are important.
- Battery management systems: The device can be used in battery management systems for electric vehicles (EVs) and energy storage systems, where high current handling and robust protection features are necessary.
- Industrial control: The STL90N6F7 can be used in various industrial control applications, such as servo drives and robotic systems, where high performance and reliability are critical.
- Renewable energy systems: The MOSFET can be used in renewable energy systems, such as solar panel inverters and wind turbine converters, where high efficiency and robust protection features are essential.
In summary, the STL90N6F7 is a high-performance MOSFET from STMicroelectronics that offers a combination of high efficiency, fast switching speeds, and robust protection features. It is suitable for a wide range of applications, including motor control, power supplies, battery management systems, industrial control, and renewable energy systems.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STL90N6F7 Documents
Download datasheets and manufacturer documentation for STL90N6F7
STLxx 27/Nov/2023 STL90N6F7 STL90N6F7 Related Parts
Shopping Guide
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