STMicroelectronics_STD6N90K5

STMicroelectronics
STD6N90K5  
Single FETs, MOSFETs

STMicroelectronics
STD6N90K5
278-STD6N90K5
Ersa
STMicroelectronics-STD6N90K5-datasheets-5191854.pdf
MOSFET N-CH 900V 6A DPAK
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STD6N90K5 Description

STD6N90K5 Description

The STD6N90K5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current capabilities. With a drain-to-source voltage (Vdss) of 900V and a continuous drain current (Id) of 6A at 25°C, this MOSFET is ideal for demanding power management and motor control applications.

STD6N90K5 Features

  • High Voltage and Current Ratings: The STD6N90K5 boasts a drain-to-source voltage (Vdss) of 900V and a continuous drain current (Id) of 6A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With an Rds On (Max) of 1.1 Ohms at 3A and 10V, the STD6N90K5 offers low conduction losses, improving efficiency in power management applications.
  • Surface Mount Package: The DPAK surface mount package allows for easy integration into printed circuit boards, reducing footprint and enhancing thermal performance.
  • Robust Gate Drive: A maximum gate-source voltage (Vgs) of ±30V ensures reliable operation in various gate drive conditions.
  • High Power Dissipation: Capable of dissipating up to 110W (Tc), the STD6N90K5 is designed for high-power applications where heat management is critical.

STD6N90K5 Applications

The STD6N90K5 is ideal for a wide range of applications, including:

  • Power Management: Its high voltage and current ratings make it suitable for power supply designs, such as SMPS (Switched Mode Power Supplies) and battery chargers.
  • Motor Control: The low on-resistance and high current capabilities make it an excellent choice for motor control applications, including industrial motor drives and automotive applications.
  • Industrial Automation: The STD6N90K5 can be used in various industrial automation systems, such as robotics and conveyor systems, where high power and reliability are crucial.

Conclusion of STD6N90K5

The STD6N90K5 from STMicroelectronics is a versatile and high-performance N-Channel MOSFET, offering a unique combination of high voltage, low on-resistance, and robust gate drive capabilities. Its surface mount package and high power dissipation make it an ideal choice for demanding power management and motor control applications in various industries. With its unique features and advantages, the STD6N90K5 stands out among similar models, providing a reliable and efficient solution for high-power electronic designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STD6N90K5 Documents

Download datasheets and manufacturer documentation for STD6N90K5

Ersa STD6N90K5      
Ersa STD6N90K5      
Ersa New Lead Frame Design 17/Mar/2023      

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